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5F058 FORMATION OF INSULATING FILMS
H01L21/312 -21/32;21/47-21/475
H01L21/312;21/47 AA AA00
PURPOSE FOR FORMATION OF ORGANIC INSULATING FILMS AND EFFECTS THEREOF 		AA01 AA02 AA03 AA04 AA05 AA06 AA07 AA08 AA10
. Improved radiation resistance . Prevention of warping, cracking, and the like . Control of film thickness . Improved moisture resistance . Improved chemical resistance . Improved step coverage . Capacitance formation . Improved adhesion . Other purposes and effects
AB AB00
SUBSTRATES WHEREIN ORGANIC INSULATING FILMS ARE FORMED, AND OBJECTS TO BE TREATED 		AB01 AB02 AB04 AB05 AB06 AB07 AB10
. Chemical-compound semiconductors . . Gallium arsenide (GaAs) . Polycrystal silicon (i.e., including amorphous silicon) . Metals . Insulators . . Glass . Other substrates wherein organic insulating films are formed, and other objects to be treated *
AC AC00
MATERIALS OF ORGANIC INSULATING FILMS WITH SINGLE-LAYER STRUCTURES 		AC01 AC02 AC03 AC04 AC05 AC06 AC07 AC08 AC10
. Epoxy resins . Polyimide resins (i.e., including precursors) . Silicon resins . Polyimide silicons . Fluororesins . Mixtures or materials with additives* . Photosensitive materials . . Photoresists . Other materials*
AD AD00
STRUCTURE AND MATERIALS OF STACKED ORGANIC INSULATING FILMS 		AD01 AD02 AD03 AD04 AD05 AD06 AD07 AD08 AD09 AD10
. Structures wherein all layers are made of organic substances . Structures with inorganic layers . Structures with at least one layer that is made of epoxy resin . Structures with at least one layer that is made of polyimide resin . Structures with at least one layer that is made of silicon resin . Structures with at least one layer that is made of fluororesin . Mixtures or materials with additives in at least one layer . Structures with at least one layer that is photosensitive . Structures with at least one layer that is made of another organic substance . Structures with at least one layer that is an inorganic oxide film
AD11 AD12
. Structures with at least one layer that is an inorganic nitride film . Structures with at least one layer that is made of another inorganic substance
AE AE00
TREATMENTS PRIOR TO THE FORMATION OF ORGANIC INSULATING FILMS 		AE01 AE02 AE03 AE04 AE05 AE06 AE10
. Intervening layers . Plasma treatments as pretreatments . Etching as a pretreatment . . Wet etching as a pretreatment . . Dry etching as a pretreatment . . Wet and dry etching used together as a pretreatment . Other treatments*
AF AF00
METHODS FOR THE FORMATION OF ORGANIC INSULATING FILMS 		AF01 AF02 AF04 AF06 AF08 AF10
. Vapor-phase deposition* . . Plasma polymerization . Coating (e.g., spinning, dipping, or the like) . Printing . Langmuir-Blodgett methods . Other methods*
AG AG00
TREATMENT SUBSEQUENT TO THE FORMATION OF ORGANIC INSULATING FILMS 		AG01 AG02 AG03 AG04 AG05 AG06 AG07 AG08 AG09 AG10
. Heat treatments as post treatment* . Etching as a post-treatment . . Wet etching as a post-treatment . . Dry etching as a post-treatment . . Wet and dry etching used together as a post-treatment . Ion irradiation as a post-treatment . Plasma treatments as a post-treatment . Mixing-in of inorganic substances . Light irradiation . Other post-treatments*
AH AH00
LOCATIONS WHERE ORGANIC INSULATING FILMS ARE FORMED 		AH01 AH02 AH03 AH04 AH05 AH06 AH07 AH10
. Formation on semiconductor substrates . Formation between circuitry layers . Formation on the top layer (e.g., last protective film) . Specific locations . . Contact-hole sections . . Grooves (e.g., mesas) . . Side walls . Other locations*
H01L21/314-21/318;21/471-21/473 BA BA00
FORMATION OF INORGANIC INSULATING FILMS, AND PURPOSE AND EFFECTS THEREOF 		BA01 BA02 BA03 BA04 BA05 BA06 BA07 BA08 BA09 BA10
. High breakdown voltage . Element separation . Improved radiation resistance . Prevention of warping, cracking, and the like . Prevention of ion contamination . Control of film thickness . Improved moisture resistance . Improved chemical resistance . Improved step coverage . Improved adhesion
BA11 BA12 BA20
. Capacitance formation . Formation of diamond films . Other factors relating to formation of inorganic insulating films, and purposes, and effects thereof*
BB BB00
SUBSTRATES WHEREIN INORGANIC INSULATING FILMS ARE FORMED, AND OBJECTS TO BE TREATED 		BB01 BB02 BB04 BB05 BB06 BB07 BB10
. Chemical-compound semiconductors . . Gallium arsenide (GaAs) . Polycrystal silicons (i.e., including amorphous silicon) . Metals . Insulators . . Glass . Other substrates wherein inorganic insulating films are formed, and other objects to be treated*
BC BC00
MATERIALS OF INORGANIC INSULATING FILMS WITH SINGLE-LAYER STRUCTURES 		BC01 BC02 BC03 BC04 BC05 BC07 BC08 BC09 BC10
. Oxides . . Semiconductor oxides . . Metal oxides . . Oxides that contain additives . . Glass . Nitrides . . Semiconductor nitrides . . Metal nitrides . . Nitrides that contain additives
BC11 BC12 BC14 BC20
. Silicon oxides or nitrides . . Materials that contain additives . Diamonds (i.e., including diamond-like carbon) . Other materials*
BD BD00
STRUCTURE AND MATERIALS OF STACKED INORGANIC INSULATING FILMS 		BD01 BD02 BD03 BD04 BD05 BD06 BD07 BD09 BD10
. Two-layer structures . Three or more layers . Structures wherein at least one layer is made of an oxide . . Semiconductor oxides . . Metal oxides . . Oxides that contain additives . . Glass . Structures wherein at least one layer is made of a nitride . . Semiconductor nitrides
BD12 BD13 BD15 BD16 BD18 BD19
. . Metal nitrides . . Nitrides that contain additives . Structures wherein at least one layer is made of a silicon oxide or nitride . . Materials that contain additives . Structures wherein at least one layer is made of another inorganic substance* . Structures wherein at least one layer is made of an organic substance
BE BE00
TREATMENTS PRIOR TO THE FORMATION OF INORGANIC INSULATING FILMS 		BE01 BE02 BE03 BE04 BE05 BE07 BE10
. Heat treatments as pretreatments* . Etching as a pretreatment . . Wet etching as a pretreatment . . Dry etching as a pretreatment . . Wet and dry etching used together as a pretreatment . Ion implantation as a pretreatment . Other pretreatments*
BF BF00
METHODS FOR THE FORMATION OF INORGANIC INSULATING FILMS 		BF01 BF02 BF03 BF04 BF05 BF06 BF07 BF08 BF09
. Vapor-phase deposition . . Chemical vapor deposition (CVD) . . . Chemical vapor deposition (CVD) at normal pressure . . . Chemical vapor deposition (CVD) at low pressure . . . Photochemical vapor deposition . . . Metal-organic chemical vapor deposition (MOCVD) . . . Plasma chemical vapor deposition (CVD) . . . . Microwave chemical vapor deposition (CVD) . . . . Electron-cyclotron-resonance chemical vapor deposition
BF11 BF12 BF13 BF14 BF15 BF17 BF18 BF19 BF20
. . Physical vapor deposition . . . Sputtering . . . . Reactive sputtering . . . . . Oxidation . . . . . Nitriding . . . Vapor deposition (i.e., including electron beam heating or the like) . . . Ion plating . . . Ion-beam vapor deposition . . . Molecular-beam epitaxy (MBE)
BF21 BF22 BF23 BF24 BF25 BF26 BF27 BF29 BF30
. . Reaction gases for forming deposited substances . . . Compounds of the main constituent elements . . . . Silane (SinH2n+2) . . . . Halides . . . . Tetraethoxysilane or tetraethylorthosilane (TEOS) . . . . Hydrocarbons . . . . Organometallic compounds . . . Oxidizing agents . . . Nitriding agents
BF31 BF32 BF33 BF34 BF36 BF37 BF38 BF39 BF40
. . . Additives . . . . Elements of Group II or III . . . . Elements of Group V or VI . . . . Halogens . . Control of deposition conditions . . . Control of reaction-gas flow rates . . . Control of impressed energy . . . . Power . . . . Light beams
BF41 BF42 BF43 BF44 BF46 BF47
. Deposition from solids or liquids . . Electrophoresis . . . Solvents . . . Electrolytes . . Coating (e.g., spinning, dipping, or the like) . . Printing
BF51 BF52 BF53 BF54 BF55 BF56 BF57 BF58 BF59 BF60
. Direct conversion of substrates and objects to be treated . . Heat conversion . . . Temperature* . . . . Temperatures less than 500 degree C . . . . Temperatures ranging from 500 to 1,000 degree C . . . . Temperatures 1,000 degree C or greater . . . Pressure . . . . High pressure . . . . Normal pressure (i.e., atmospheric pressure) . . . . Low pressure
BF61 BF62 BF63 BF64 BF65 BF66 BF67 BF68 BF69 BF70
. . . Atmosphere . . . . Dry oxidizing atmospheres . . . . Wet oxidizing atmospheres . . . . Nitriding atmospheres . . . . Atmospheres that contain additional constituents . . . . . Elements of Group II or III . . . . . Elements of Group V or VI . . . . . Halogens . . Dipping in liquids . . Anodizing
BF71 BF72 BF73 BF74 BF75 BF76 BF77 BF78 BF80
. . . Electrolytes . . Plasma treatments . . . Oxidation . . . Nitriding . . Use of energy beams . . . Ion beams . . . Lasers . . . Ultraviolet rays . Other methods*
BG BG00
DEVICES FOR THE FORMATION OF INORGANIC INSULATING FILMS 		BG01 BG02 BG03 BG04 BG10
. Reaction chambers . Devices for introduction or exhaustion of gas . Means for heating of substrates . Holding or moving of substrates . Other devices*
BH BH00
TREATMENTS SUBSEQUENT TO THE FORMATION OF INORGANIC INSULATING FILMS 		BH01 BH02 BH03 BH04 BH05 BH07 BH08 BH10
. Heat treatments as post-treatments . . Atmosphere . . . Oxidizing atmospheres . . . Nitrogen . . . Mixtures of hydrogen and nitrogen . . Fining . . Reflow . Etching as a post-treatment
BH11 BH12 BH13 BH15 BH16 BH17 BH20
. . Wet etching as a post-treatment . . Dry etching as a post-treatment . . Wet and dry etching used together as a post-treatment . Ion implantation as a post-treatment . Plasma treatments as post-treatments . Ultraviolet irradiation as a post-treatment . Other post-treatments*
BJ BJ00
LOCATIONS WHERE INORGANIC INSULATING FILMS ARE FORMED 		BJ01 BJ02 BJ03 BJ04 BJ05 BJ06 BJ07 BJ10
. Formation on semiconductor substrates . Formation between circuitry layers . Formation on the top layer (i.e., last protective film) . Specific locations . . Contact-hole sections . . Grooves (e.g., mesas) . . Side walls . Other locations*
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