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F-Term-List

5F056 ELECTRON BEAM EXPOSURE
H01L21/30 ,541-21/30,551
H01L21/30,541-21/30,551 AA AA00
EXPOSURE METHOD 		AA01 AA02 AA03 AA04 AA05 AA06 AA07 AA08
. Direct drawing methods . . Gaussian beams e.g. spot beams . . Fixed-shape beams . . Variable-shape flat beams . . Variable-shape line beams . . Character-selection beams e.g. stencils . . Blanking aperture arrays . . Other beam-reshaping methods *
AA12 AA13 AA15 AA16 AA17 AA19 AA20
. . Raster-scan methods . . Vector-scan methods . . Single-stage deflection scanning . . Two-stage deflection scanning . . Deflection scanning of three or more stages . . Step-and-repeat types . . Stage continuously moving types
AA21 AA22 AA23 AA25 AA26 AA27 AA29 AA30
. Transfer systems by using pattern masks . . by using projection masks . . by using photoelectric masks . . Proximity exposure . . Unit magnification exposure . . Reduction exposure . . Step-and-repeat types . . Batch-transfer systems
AA31 AA33 AA35 AA40
. using a plurality of exposure systems together * . having a plurality of beam sources . Simultaneous exposure of a plurality of chips . Other exposure methods *
BA BA00
DETECTION OR MEASUREMENT OBJECT 		BA01 BA02 BA04 BA05 BA06 BA08 BA09 BA10
. Beam current amount . Distribution of beam current density or the intensity . Beam diameter i.e. one dimension . Beam cross-sectional shape or rotation i.e. two dimensional . Information about beam edges . Position of beam irradiation on sample surface . Beam position in lens barrel . Other detection or measurement *
BB BB00
DETECTION OR MEASUREMENT MEANS 		BB01 BB02 BB03 BB06 BB07 BB08 BB09 BB10
. Electron detectors . . A plurality of detectors . Faraday cups . Beam reflectors . . Targets . . Wires . . Knife edges . Other detection or measurement means
BC BC00
DETECTED SIGNAL PROCESSING 		BC01 BC02 BC03 BC04 BC05 BC06 BC07 BC08 BC10
. A plurality of detections of signal processing . Differentiation of signals . Integration of signals e.g. moments or centres of gravity . Sum or difference of signals e.g. of a plurality of detectors . Setting of threshold values . Elimination of error signals or noise . Use of signal frequency analysis or filters . Display indication . Other signal processing *
BD BD00
POSITIONING MARK 		BD01 BD02 BD03 BD04 BD05 BD06 BD07 BD08 BD09
. Chip-field marks . Wafer marks . Reference marks . Mark structure * . Methods for reading marks . . Scanning over marks . Cleaning marks e.g. peeling of resists . Protection of marks . Methods for arranging marks e.g. fields or pads
CA CA00
DATA PROCESSING METHOD 		CA01 CA02 CA04 CA05 CA07 CA09
. Conversion from design data to device driving data . . Creation of field data . . . Field settings matched to patterns . . dividing into shot patterns . . Elimination of multiple exposures . . Processing of errors occurred with data conversion
CA11 CA12 CA13 CA14 CA15 CA16 CA17
. Working or correction of data . . Black and white inversion . . Resizing . . Mirror-image inversion . . Rotation . . Reduction or enlargement . . Merging
CA21 CA22 CA23 CA25 CA26 CA28 CA30
. Bulk data processing and high speed processing . . Data compression or expansion . . Processing of repeated data . . Data transfer . . Parallel processing . Data errors . Other data processing *
CB CB00
CONTROL OBJECT 		CB01 CB02 CB03 CB05 CB07 CB08 CB09
. Electron guns . . Acceleration voltage . . Amount of beam current . Blanking . Beam shapers . . Mutual relation among shaping apertures . Beam slackness
CB11 CB12 CB13 CB14 CB15 CB16 CB18 CB19
. Deflectors for scanning . . Deflection speed . . Deflection width or gain . . Main and secondary deflection . . Pattern formation by scanning . . Correction of electric characteristics of deflectors . Beam rotation . . Misalignment between aperture-edge direction and scanning direction
CB21 CB22 CB23 CB24 CB25 CB26 CB28 CB29 CB30
. Stages . . Position . . Moving speed . . Vibration . . Control direction e.g. Z theta direction . . Feed width . Axis alignment or axis passage . Elimination of astigmatism . Elimination of other aberrations excluding deflection distortion *
CB31 CB32 CB33 CB34 CB35 CB40
. Lenses . . Focus . . . by measurement of beam diameter or beam shape . . . Regular focusing by deflection . . . by measurement of sample surface height . Other control *
CC CC00
DRAWING METHOD 1 (PURPOSE FOR IMPROVEMENT OF DRAWING ACCURACY) 		CC01 CC02 CC03 CC04 CC05 CC07 CC08 CC09 CC10
. Accuracy of irradiation position* . . Deflection distortion . . Wafer distortion e.g. expansion contraction warp or unevenness . . Drift in position of beam irradiation e.g. charge-up . . Errors in stage positions . Positioning accuracy . . Superimposition e.g. registration . . Joining of patterns between fields . . Orthogonality or cross-matching of coordinate systems
CC11 CC12 CC13 CC14 CC15 CC16
. Size and shape accuracy of drawing pattern . . Proximity effects between figures . . Proximity effects within figures . . Space-charge effects or Coulomb effects . . Post-polymerisation effects . . Increasing degrees of temperature in samples
CD CD00
DRAWING METHOD 2 (METHOD FOR IMPROVEMENT OF DRAWING ACCURACY) 		CD01 CD02 CD03 CD04 CD05 CD06 CD07 CD09 CD10
. applying input correction to electro-optical systems . . Reading corrected values in memory . . Producing corrected values by means of correction formulas . . Producing corrected values by interpolation . Temperature adjustment . Irradiation time or non-irradiation time . Techniques for changing beam diameter . Correction of pattern dimensions or shape i.e. reduction methods . Outline pattern process
CD11 CD12 CD13 CD14 CD15 CD16 CD17 CD18 CD19 CD20
. Correction methods for amounts of irradiation . . Techniques for corrected beam irradiation e.g. ghost effects . . Correction for every splitting pattern or shot . . Changing with time . . Irradiation by separate amounts of irradiation . Joining patterns and multiple irradiation . Correction methods for acceleration voltage . Control of density of beam current . Neutralising charges . Other drawing methods *
H01L21/30,541@P DA DA00
SAMPLE TREATMENT 		DA01 DA02 DA04 DA05 DA07 DA08 DA09 DA10
. characterised by resists or layers including resists . . Multi-layer resists * . . Specific names of resist substances e.g. macromolecules . . . Resist substances other than macromolecular compounds . . Actions and properties of resist layers * . . . Prevention of electron reflection or scattering of electrons . . . Improvement of resistance to plasma or etching . . . Preventing effects from heat
DA11 DA13 DA15 DA17
. Pre-treatment of exposure * . After-treatment of exposure * . characterised by ambient gas * . Processing apparatuses for resists
DA21 DA22 DA23 DA24 DA25 DA26 DA27 DA30
. Methods of pattern formation during exposure . . Plural exposures e.g. electron beams plus electron beam or electron beam plus other beams . . Prevention of charge-up . . Direct formation of patterns by means of beams e.g. deposition or evaporation . . applying voltage to samples . . specifying treatment temperatures . . Specifying beam attributes e.g. acceleration voltage or current density . Others
H01L21/30,541@A;21/30,541@B;21/30,541@G;21/30,541@L EA EA00
DRAWING APPARATUS 		EA01 EA02 EA03 EA04 EA05 EA06 EA08 EA10
. Electron-optical systems * . . Electron guns . . Blanking devices . . Apertures . . Lenses . . Deflectors . . characterised by assembly of electron-optical systems * . Electric components in general
EA11 EA12 EA13 EA14 EA15 EA16 EA17 EA18
. Mirror systems * . . Lens barrels drawing chambers or extra chambers * . . Wafer loaders . . Stages . . Cassettes or adsorption devices . . Vacuum systems . . Bases . . Plates for blocking scattered electrons
H01L21/30,541@S;21/30,541@T FA FA00
TRANSFER EXPOSURE 		FA01 FA02 FA03 FA04 FA05 FA06 FA07 FA08 FA10
. Transfer devices . . Light sources or electron sources . . Electron-optical systems . . Mirror systems . Mask structures . Positioning or alignment . Methods for improvement of transfer accuracy or resolution . . Proximity effects . Others *
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