F-Term-List

H01L21/208-21/208@Z;21/368-21/368@Z

AA00
GROWING METHODS

AA01

AA02

AA03

AA04

AA05

AA06

AA07

AA08

AA09

. Sliding

. Tilting (e.g., Nelson's technique, tipping)

. Dipping

. Langmuir-Blodgett's (LB) technique

. . Perpendicular immersion (LB technique)

. Spinning

. Boat techniques

. . Horizontal or lateral Bridgeman technique

. . Gradient freezing technique (GF technique)

AA11

AA12

AA13

AA14

AA15

AA16

AA17

AA18

AA19

. Vertical or longitudinal Bridgeman technique

. Lift method (i.e., Czochralski method)

. . Revolving of the seed crystals and the melt with relation to one another

. . Charging of a magnetic field

. . Pulling of sheet-like material

. Zone melting

. . Temperature gradient zone melting (TGZM)

. . Zone melt leveling

. . Floating zone melting

AA21

AA22

AA23

AA24

AA25

AA26

. Methods of controlling, regulating, monitoring, and measuring growth

. . Methods of controlling and regulating temperature

. . . Time series temperature control

. . . . Variants for forced inversion of pn-junctions

. . . . Gradual cooling or heat reduction techniques

. . . . . Temperature reducing procedures

AA32

AA33

AA34

AA35

AA36

. . . Variants that use differences in temperature at multiple locations

. . . . Temperature difference methods, temperature gradient methods, and temperature slope methods

. . . . Traveling zones

. . . . Three-temperature methods

. . . . Two-temperature methods

AA42

AA43

AA44

AA45

AA46

AA47

AA48

AA49

AA50

. . Monitoring and measurement

. . Object of control or regulation

. . . Melts

. . . . Melt concentration

. . . Ingots or bulk substances

. . . Growth substrates

. . Methods of controlling and regulating environment

. . Sequential control methods

. Others

BB00
GROWTH APPARATUSES

BB01

BB02

BB03

BB04

BB05

BB06

BB08

BB09

. Growth containers

. . Forms

. . . Boats

. . . Crucibles

. . . Reaction tubes

. . . . Closed tubes or ampoules

. . . Variants having rotating mechanisms

. . . Coatings

BB12

BB13

BB14

BB15

. . Materials and material properties

. . . Quartz

. . . Carbon

. . . Graphite

BB21

BB22

BB23

BB24

BB25

BB26

BB27

BB28

BB29

. Melts and apparatuses associated therewith

. . Separation of unwanted portions from melts

. . Distribution of melts

. . Melts of other than growth materials

. . . Dummy melts

. . Multiple types of melts placed side-by-side

. . Variants having melt pressure means

. . . Variants that lift melts

. . . Extrusion of pre-treatment melts using after-treatment melts

BB32

BB33

BB34

BB35

BB36

BB38

BB39

. . Melt reservoirs

. . . Side walls

. . . Covers

. . . . Sealing with liquids (e.g., liquid encapsulated Czochralski method)

. . . Waste liquid reservoirs

. . Feeding or replenishing of materials to melts

. . Variants in which each melt moves independently

BB41

BB42

BB43

BB44

BB45

BB48

. Growth substrate handling apparatuses

. . Relative movement of substrates and melts by sliding

. . . Sliders

. . . Variants having multiple sections that move relative to each other

. . . Variants with relative movement around a circumference

. . Variants in which only partitions slide

BB52

BB53

BB54

BB55

BB57

BB58

BB59

BB60

. . Variants that accommodate multiple growth substrates simultaneously

. . Variants in which growth substrates are disposed in multiple layers

. . Variants in which growth substrates are not situated horizontally

. . Equipment to protect growth substrates

. Apparatuses that add vapor phase component substances or dopants

. Heaters

. Doping devices

. Others

DD00
GROWTH SUBSTANCES

DD01

DD02

DD03

DD04

DD05

DD06

DD07

DD08

DD09

. Si

. SiC

. GaAs

. GaAsP

. GaAlAs

. GaAlAsP

. GaP

. GaInP

. GaInSb

DD11

DD12

DD13

DD14

DD15

DD16

DD17

DD18

DD19

DD20

. InP

. InGaAsP

. CdSiP

. CdTe

. HgCdTe

. ZnSe

. PbSe

. BN

. Organic substances

. Others

FF00
FORMS OF GROWTH

FF01

FF02

FF04

FF05

FF10

. Thin films

. . Multi-layer films

. Ingots or bulk substances

. . Wafers or plate-like bodies

. Others

GG00
CIRCUMSTANCES OF GROWTH

GG01

GG02

GG03

GG05

GG06

GG10

. Monocrystal or epitaxial growth

. Polycrystals

. Amorphous materials (i.e., non-crystalline)

. Selective growth

. . Masks

. Others

HH00
SUBSTRATES

HH01

HH02

HH04

HH05

HH07

HH10

. Wafers

. Band-like bodies and webs

. Semiconductor growth substrates

. Growth substrates other than semiconductors

. Dummy substrates

. Others

JJ00
CONDUCTIVE TYPES OF THE PORTIONS GROWN

JJ01

JJ03

JJ10

. p-types

. n-types

. Others

KK00
DOPANTS

KK01

KK02

KK03

KK04

KK05

KK06

KK07

KK08

KK10

. Silicon (Si)

. Germanium (Ge)

. Boron (B)

. Zinc (Zn)

. Lithium (Li)

. Sulfur (S)

. Carbon (C)

. Tellurium (Te)

. Others

LL00
APPLICABLE DEVICES

LL01

LL02

LL03

LL04

LL05

LL06

LL10

. Light-emitting bodies

. . Light-emitting diodes

. . Semiconductor lasers

. Light-receiving bodies

. . Solar cells

. . Light sensors

. Others

PP00
PRETREATMENTS AND AFTER-TREATMENTS

PP01

PP02

PP03

PP04

PP05

PP06

PP07

PP08

. Variants that clean

. Variants that etch

. Variants that perform heat treatment and annealing

. Variants that perform meltback

. Variants that perform reduction treatment

. Variants that perform ion implantation

. Variants that perform masking

. Variants that perform mechanical grinding

PP11

PP12

PP13

PP14

PP20

. Variants that perform other types of growth

. . Chemical vapor deposition (CVD)

. . Physical vapor deposition (PVD)

. . . Molecular beam epitaxial growth (MBE)

. Others

RR00
PURPOSE, EFFECTS, AND FUNCTIONS

RR01

RR02

RR03

RR04

RR05

RR06

RR07

RR08

. Uniformity of growth substances

. . Reduction of edge growth

. Reduction of the rate of inclusion of defects in lattices

. Stabilization of quality (e.g., to increase yield)

. Improvement of manufacturing capability (e.g., shortening the manufacturing process and time)

. . Continuous processing

. Improvement of durability

. Increase of output

RR11

RR12

RR13

RR14

RR20

. Improvement of light-emission characteristics

. Improvement of photosensitivity characteristics

. Improvement of economy (e.g., cost reduction, economizing on materials)

. Environmental countermeasures

. Others

5F053	Liquid deposition of substances of which semiconductor devices are composed
	H01L21/208 -21/208@Z;21/368-21/368@Z