Japanese
close

F-Term-List

5F049 Light-receiving elements 3: Photodiodes and transistors
H01L31/10 -31/10@Z
H01L31/10-31/10@Z MA MA00
KINDS OF ELEMENTS 		MA01 MA02 MA03 MA04 MA05 MA07 MA08 MA09
. Photodiodes (PDs) . . PN junction types . . . PN heterojunction types . . PIN junction types . . Schottky barrier type . . Avalanche photodiodes or APDs . . . Absorption/multiplication separated APDs . . . Superlattice APDs
MA11 MA12 MA13 MA14 MA15 MA20
. Phototransistors or PTs . . Bipolar types . . . Heterojunction types . . Field effect types or FETs . . . MIS or MOS FETs . Other elements
MB MB00
MATERIALS FOR THE BODY OF THE ELEMENT (SUBSTRATES OR ELECTRODES SE-SZ) 		MB01 MB02 MB03 MB04 MB05 MB07 MB08
. Materials (*) . . Group IV materials (*) . . . Single crystal or polycrystal materials (*) . . . Crystallite materials (*) . . . Amorphous materials (*) . . Materials of groups III-V (*) . . Organic materials (*)
MB11 MB12 MB14
. Dopant materials (*) . . for determining conductivity types (*) . Binder materials (*)
NA NA00
PURPOSES OR EFFECTS 		NA01 NA02 NA03 NA04 NA05 NA06 NA07 NA08 NA09 NA10
. Improvement in sensitivities or improvement in quantum efficiencies . . Reduction or prevention of surface reflections . Improvement of response or improvement of frequency characteristics . Improvement of S/N ratio . Reduction of dark current . Prevention of edge breakdown . Improvement of environment resistances . relating to the manufacturing steps e.g. improvement of the production yield . for mounting or attaching . Improvement of spectral characteristics
NA11 NA12 NA13 NA14 NA15 NA16 NA17 NA18 NA19 NA20
. Bandgap control . Impurity concentration control . Control of lattice constant . Reduction of electric resistance . Reduction of capacitance . Increase of capacitance . Prevention of malfunctions and countermeasures to external impairments . Productivity improvement and cost reduction . Size reduction or weight reduction . Other purposes or effects
NB NB00
USES 		NB01 NB03 NB05 NB06 NB07 NB08 NB10
. for optical communication . for image sensors . for imager elements . for targets in pick-up tubes . for measurements . for optical pick-ups . Other uses
PA PA00
MANUFACTURING METHODS OR STEPS 		PA01 PA02 PA03 PA04 PA05 PA06 PA07 PA08 PA09 PA10
. Crystal growth . . Liquid phase epitaxial methods (LPE*) . . Vapour phase epitaxial methods (VPE *) . . . MOCVD method or metal organic CVD. . Thin film arts . . Vapour phase deposition methods . . Sputtering methods . Doping . . Thermal diffusion . . Ion implantation
PA11 PA12 PA14 PA15 PA17 PA18 PA20
. Heat treatments . . Optical annealing . Etching . Electrode forming methods . Element splitting or dicing and scribing . characterised by manufacturing conditions e.g. temperatures pressures or times . Others relating to manufacturing methods
QA QA00
ELEMENT STRUCTURES IN GENERAL (JUNCTIONS THEREOF MA; DETAILS THEREOF SE ) 		QA01 QA02 QA03 QA04 QA05 QA06 QA07 QA08 QA09 QA10
. Structure of photodiodes . . Mesa type . . Planar type . . Substrate type or bulk type . . Reach-through types . . Back incident types . . Tandem types or layer-structure types . . Waveguide types . Structure of phototransistors . . Base-less terminal types
QA11 QA12 QA13 QA14 QA15 QA16 QA17 QA18 QA19 QA20
. Components of element main body . . Guard rings . . . Structures of guard rings . . Channel stoppers . . Buried layers . . Superlattices . . Window layers . . Buffer layers . . . Graded bandgap layers . Others relating to element structures in general
RA RA00
MODULARISATION 		RA01 RA02 RA03 RA04 RA06 RA07 RA08 RA10
. Multiple elements of the same kinds . . Arrays . . . PN separation . . . Insulator separation . Integrated elements . . Connection with light emitting elements . . Connection with switching elements . Others relating to modularisation
SE SE00
ELECTRODES 		SE01 SE02 SE03 SE04 SE05 SE06 SE07 SE09
. Materials (*) . . Transparent electrodes (*) . . . SnO2 . . . ITO . . Metal electrodes (*) . . Organic materials (*) . . Paste materials . characterised by shapes
SE11 SE12 SE14 SE15 SE16 SE17 SE20
. characterised by structures . . Multi-layered structures . Functions . . for mounting . . double working as reflection films . . double working as light shading films . Others relating to electrodes
SS SS00
SUBSTRATES 		SS01 SS02 SS03 SS04 SS06 SS07 SS08 SS09 SS10
. Materials (*) . . Semiconductor substrates (*) . . . Group IV (*) . . . Groups III-V (*) . Structures . . Multilayered structures . . Surface treatments . Orientation (*) . Others relating to substrates
SZ SZ00
OTHER COMPONENTS OF ELEMENTS 		SZ01 SZ02 SZ03 SZ04 SZ06 SZ07 SZ08 SZ10
. Antireflection films . . Materials (*) . . . Inorganic materials (*) . . Structures . Filter films . . Materials (*) . . Structures . Light shading films excluding electrodes
SZ11 SZ12 SZ13 SZ16 SZ20
. Surface protective films . . Materials (*) . . . SiO2 . Reflection films . Others relating to this viewpoint
TA TA00
CASES OR MOUNTING 		TA01 TA02 TA03 TA05 TA06 TA08 TA09 TA10
. Mounting of elements . . Lead frames . . Bases . Bonding . . Wire bonding . Cases or packages . . Moulding . . Can sealing
TA11 TA12 TA13 TA14 TA20
. Connection with optical members . . Lenses . . Optical filters . . Optical fibres . Others relating to cases or mounting
UA UA00
PERIPHERAL CIRCUITS 		UA01 UA02 UA04 UA05 UA06 UA07
. for a plurality of light receiving elements. . for an emission of bias lights . Functions of circuits. . . Gain control . . Temperature compensation . . Quick response
UA11 UA12 UA13 UA14 UA16 UA17 UA18 UA20
. Bias circuits . . Current-to-voltage converters . . Amplifiers . . Switches . Detector circuits for feedback . . Detection of output currents /voltages of light receiving elements . . Temperature detection . Other peripheral circuits
WA WA00
RECEIVING LIGHT WAVELENGTH RANGES 		WA01 WA03 WA05 WA07 WA08 WA09
. Infrared light . Visible light . Ultraviolet light . X rays gamma rays or particle beams . Variable receiving light wavelengths . Reception of light in wide ranges including reception of multi-colour light.
TOP