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F-Term-List

5F046 EXPOSURE OF SEMICONDUCTORS, EXCLUDING ELECTRON OR ION BEAM EXPOSURE
H01L21/30 -21/30,531@Z;21/30,561-21/30,579;21/46
H01L21/30-21/30,531@Z;21/30,561-21/30,579;21/46 AA AA00
FEATURE COMMON TO EXPOSURE OF SEMICONDUCTOR 		AA01 AA02 AA03 AA04 AA05 AA06 AA07 AA08 AA09 AA10
. with multiple kinds of exposure . . Ultra-violet radiation or ultra-violet light exposure . . . Contact exposure . . . Proximity exposure . . . Projection exposure . . . Beam-scanning exposure . . . Far-ultraviolet radiation exposure . . X-ray exposure . . Electron beam exposure . . Ion beam exposure
AA11 AA12 AA13 AA15 AA16 AA17 AA18 AA20
. applying the same kind of exposure twice or more . . avoiding defects . . fining patterns . exposing both sides of wafers . exposing substrate information . Combinations with other processing functions * . . Combinations with patterns or foreign matter checking devices . devising shapes or structures of wafers
AA21 AA22 AA23 AA25 AA26 AA28
. housing wafers or masks . Atmospheres inside exposure devices * . Antivibration . adjusting shapes or structures of mask patterns . . by influence of surface shapes or structures of wafers . Others *
H01L21/30,505-21/30,528 BA BA00
KIND OF ULTRA-VIOLET RADIATION OR ULTRA-VIOLET LIGHT EXPOSURE 		BA01 BA02 BA03 BA04 BA05 BA06 BA07 BA08 BA09 BA10
. Contact exposure . Proximity exposure . Projection exposure . . Reduced projection exposure . . Scanning-projection exposure or reflection-projection exposure . . Pattern generators . Beam-scanning exposure . Interference exposure . Holographic exposure . Others *
H01L21/30,527 CA CA00
LIGHT SOURCE FOR ULTRA-VIOLET RADIATION OR ULTRA-VIOLET LIGHT EXPOSURE 		CA01 CA02 CA03 CA04 CA05 CA06 CA07 CA08 CA09 CA10
. Lamps * . . Discharge lamps * . Lasers * . . Excimer lasers . . preventing speckling . Movement, rotation or positioning of light sources . Wavelength of light sources * . . Far-ultraviolet radiation * . Cathode-ray tubes (CRT) or matrices . Others *
H01L21/30-21/30,531@Z;21/30,561-21/30,579;21/46 CB CB00
OPTICAL SYSTEM 		CB01 CB02 CB03 CB04 CB05 CB06 CB07 CB08 CB09 CB10
. Optical system elements . . Reflecting mirrors . . . Convex or concave mirrors . . Optical fibres . . Aperture blades or masking blades . . Shutters . . Half mirrors . . Filters . . . Spatial frequency filters . . Prisms
CB11 CB12 CB13 CB14 CB15 CB17 CB18 CB19 CB20
. . Quarter-wave plates . . Lenses . . . Light integrators or fly-eye lenses . . . Collimators . . Polarising plates . . Masks or reticles . . . changing mask patterns by liquid crystals or the like . . Glass plates . . Lens barrels
CB21 CB22 CB23 CB24 CB25 CB26 CB27
. Positions of optical systems . . in the vicinity of light sources . . between light sources and masks or reticles . . between masks or reticles and wafers . . . Projection optical systems . . . . in the vicinity of lens barrels . Others *
CC CC00
STAGE OR CHUCK MECHANISM AND OPERATION THEREOF 		CC01 CC02 CC03 CC04 CC05 CC06 CC08 CC09 CC10
. Wafer stages . Mask stages . XY-stages or XY-axis directions . . for step-and-repeat operations . Z stages or Z axis directions . Theta stages or theta directions . Wafer chucks . Supports of mask chucks or masks . Vacuum chucks
CC11 CC13 CC14 CC15 CC16 CC17 CC18 CC19 CC20
. Flat-surface adjustment of wafers or masks by chucks . Operations of stages or chucks . . Orders or positions of step-and-repeat exposure . Movement of lens barrels, light sources or the like relative to stages . using laser length measuring meters . Mechanisms for moving stages . . mechanical . . hydrostatic or pneumatic . Others *
H01L21/30,502@J CD CD00
CONVEYANCE OF WAFER OR MASK 		CD01 CD02 CD03 CD04 CD05 CD06 CD07 CD08 CD10
. conveying wafers . conveying masks . Parts where to perform conveyance . . between storage parts of wafers or masks and exposure devices . . between exposure and processes before and after exposure . Conveying means . . Blowouts of air . . Belt conveyers . Others *
H01L21/30-21/30,531@Z;21/30,561-21/30,579;21/46 DA DA00
OBJECT OF EXPOSURE CONTROL OR ADJUSTMENT, OR CONTENT THEREOF 		DA01 DA02 DA03 DA04 DA05 DA06 DA07 DA08 DA09
. Light beams including X-ray sources . Amount of exposure or exposure time . Shutters . Inside of exposure devices as a whole . Flatness or tilt of wafers or masks . Masks or vicinity of masks . Wafers or vicinity of wafers . Vicinity of wafers and masks . Peripheries of exposure devices
DA11 DA12 DA13 DA14 DA16 DA17 DA20
. Projection exposure . . Projection optical systems . . . Magnification, optical path lengths or distortion . . . Focus . Proximity exposure . . Spaces or parallelism between wafers and masks . Contact exposure
DA21 DA22 DA23 DA24 DA26 DA27 DA29 DA30
. . Degrees of contact of wafers and masks . . . Mechanical adjustment in Z axis directions . . . Adjustment of degrees of vacuum or pressure in spaces . . Peeling of masks from wafers after exposure . Temperature . Pressure or atmospheres . Processes before and after exposure * . Others *
DB DB00
DETECTION FUNCTION 		DB01 DB02 DB03 DB04 DB05 DB06 DB07 DB08 DB09 DB10
. Light or quantity of light, including X-rays . Temperature . Pressure or atmospheres . Distance, length, width, position or tilt . . optical . . pneumatic . Spaces . . optical . . pneumatic . A plurality of or multiple kinds of detection functions
DB11 DB12 DB14
. Auxiliary means for detection functions * . . Half mirrors . Others *
DC DC00
MOUNTING POSITION OF DETECTION FUNCTION 		DC01 DC02 DC03 DC04 DC05 DC06 DC07 DC08 DC09 DC10
. in the vicinity of light sources or X-ray sources . between light sources or X-ray sources and masks . Mask substrates . in the vicinity of masks . . Mask chucks or mask stages . between wafers and masks . Lens barrels or in the vicinity thereof . . inside lens barrels . . at lower parts of lens barrels or in the vicinity thereof . in the vicinity of wafers
DC11 DC12 DC14
. . Wafer chucks . . Wafer stages . Others *
DD DD00
INDICATION OR INFORMATION RELATING TO CONTROL OR ADJUSTMENT 		DD01 DD02 DD03 DD04 DD06
. Indicating means . . Cathode-ray tubes (CRT) . Information on wafer or mask surfaces . Information on mask frames . Others *
EA EA00
ALIGNMENT MARK 		EA01 EA02 EA03 EA04 EA05 EA06 EA07 EA08 EA09 EA10
. Surface shapes . . Crosses . . Bars . . square or circular . . mountain-shaped . . L-shaped or right-angle shaped . . Diffraction gratings or moire stripes . . Fresnel zone plates . . A plurality of identical marks or multiple shapes at identical positions . . Collections of multiple kinds of marks
EA11 EA12 EA13 EA14 EA15 EA16 EA17 EA18 EA19 EA20
. Cross-sectional shapes, cross-sectional structures or materials . . Concave marks . . Convex marks . . Mark surface materials * . . . Silicon dioxide (SiO2) layers . . . Epitaxial layers . . . Substrates of silicon or the like . . . Metal layers * . . consisting of a plurality of stacked material layers * . . Marks comprising crystal planes
EA21 EA22 EA23 EA24 EA26 EA27 EA28 EA30
. . Through-holes . Manufacture of marks . . Etching . . Epitaxial growth or chemical vapour deposition (CVD) . . Lithography . . Diffusion or ion implantation . . Oxidation . Others *
EB EB00
ARRANGEMENT OF ALIGNMENT MARK 		EB01 EB02 EB03 EB05 EB06 EB07 EB08 EB09 EB10
. on wafers . on masks or mask frames . on stages or chucks . on each chip . on representative chips . on scribe lines . on peripheries of wafers or masks . on wiring, electrodes or bonding pads . Others *
EC EC00
SPECIAL USE OF ALIGNMENT MARK 		EC01 EC02 EC03 EC05
. for positioning mask stages and chucks . for positioning wafer stages and chucks . for adjusting Z axis directions . Others *
ED ED00
MARK ON TWO OBJECTS TO BE POSITIONED 		ED01 ED02 ED03 ED05
. Wafer marks and mask marks . Wafer marks and reference marks . Mask marks and reference marks . Others *
FA FA00
OPTICAL DETECTION OF ALIGNMENT MARK 		FA01 FA02 FA03 FA04 FA05 FA06 FA07 FA08 FA09 FA10
. Light sources for detection or alignment mark irradiating light . . Exposure light or light of wavelengths near exposure light . . Exposure safety light or light of wavelengths far from exposure light . . Light scanning . . Lasers . . Two or more wavelengths . . Selection from two or more wavelengths . . X-rays, electron beams or ion beams . Light-receiving devices for detection . . Imaging means or television cameras
FA11 FA14 FA16 FA17 FA18 FA19 FA20
. . Rectilinear light-receiving sensor arrays . Transmission types . TTL . Microscopes or visual observation . Light reflection or absorption by stages . using vibrations . Others *
FB FB00
OPTICAL SYSTEM FOR DETECTION 		FB01 FB02 FB03 FB04 FB06 FB07 FB08 FB09 FB10
. Arrangement positions of optical systems for detection . . between light sources for detection and marks closer to the light sources . . between marks on two objects . . between marks near light-receiving devices for detection and the light-receiving devices . Elements of optical systems . . Quarter-wave plates . . Half mirrors . . Prisms . . Mirrors
FB11 FB12 FB13 FB14 FB15 FB16 FB17 FB18 FB19 FB20
. . Glass plates . . Lenses . . Filters . . . Spatial frequency filters . . Fresnel zone plates . . Slits or scanning of slits . Correction of chromatic aberrations or optical path lengths . Dark-field systems . Movement of optical systems for detection . Others *
FC FC00
DETECTION OF ALIGNMENT MARK IN GENERAL AND DETECTION ASSISTANCE 		FC01 FC02 FC03 FC04 FC05 FC06 FC07 FC08 FC09 FC10
. Protection or preservation of wafer mark parts . Removal of resists from wafer mark parts . Indication of positioning conditions or results . Data processing of detected mark information . Movement of stages or the like according to mark detection results . . storing positions of multiple marks or calculating positions of each chip . performing two or more kinds of positioning . also performing prealignment . for double-sided exposure . Others *
H01L21/30,531@A-21/30,531@Z GA GA00
X-RAY EXPOSURE 		GA01 GA02 GA03 GA04 GA06 GA07 GA08 GA09
. Kinds of exposure . . Proximity exposure . . Projection exposure . . Step-and-repeat exposure . X-ray scanning . Atmospheres in exposure devices or chambers * . . in the vicinity of wafers * . . in the vicinity of X-ray sources *
GA11 GA12 GA14 GA16 GA18 GA20
. Wafer chucks or wafer stages . Mask chucks or mask stages . Control, adjustment, detection or indication . Resist processing or pattern formation . Positioning . Others *
GB GB00
X-RAY OPTICAL SYSTEM 		GB01 GB02 GB03 GB04 GB05 GB07 GB09
. Mirrors . Lenses or Fresnel zone plates . Slits . X-ray transmitting films or X-ray outlet windows . Shutters . Elimination of unnecessary rays or filters . Others *
H01L21/30,531@S GC GC00
X-RAY SOURCE 		GC01 GC02 GC03 GC04 GC05
. applying electron beams to targets . . Rotary targets . Plasma X-ray sources . Synchrotron orbital radiation (SOR) . Others *
H01L21/30,531@M GD GD00
MASK FOR X-RAY EXPOSURE 		GD01 GD02 GD03 GD04 GD05 GD06 GD07 GD08 GD09 GD10
. X-ray absorption layers or absorption layer materials * . Special arrangement relationship between X-ray absorption layers and support films . Support films of X-ray absorption layers or support film materials * . Frames, reinforcement bodies, support frames, and materials thereof * . Reduction or adjustment of stress . Adjustment of coefficients of thermal expansion . Embedding of protective layers, surface layers or absorption layers * . Spacers . Alignment marks or transmission parts of light or the like . Stencil types or reflective or fluorescent X-ray generation types
GD11 GD12 GD13 GD14 GD15 GD16 GD17 GD18 GD19 GD20
. Defect inspection or defect correction . Processes . Manufacture * . . Electroplating . . Etching . . Chemical vapour deposition (CVD), sputtering or vapour deposition . . Lithography . . Lift-off . . Adhesion . Others *
H01L21/30,563 HA HA00
SURFACE TREATMENT OF WAFER BEFORE RESIST COATING 		HA01 HA02 HA03 HA04 HA05 HA07
. forming adhesion strengthening films for resists * . . Devices therefor * . Washing . Etching . Plasma treatment other than etching . Others *
H01L21/30,564@C-21/30,564@Z JA JA00
RESIST COATING 		JA01 JA02 JA03 JA04 JA05 JA06 JA07 JA08 JA09 JA10
. Feeding of resist liquids and control or adjustment thereof . . Feeding nozzles . . Feeding lines . Spin coating . . Treatment containers, or washing or cleaning of treatment containers . . preventing reattachment of resists . . introducing gases . . Exhaust or drainage systems . . feeding solvents . . Rotational chuck bodies
JA11 JA12 JA13 JA14 JA15 JA16 JA19 JA20
. . Specialisation of rotating mechanisms . . dipping wafers in resist liquids . . Adjustment of rotations or number of rotations . . coating or drying wafers with wafer surfaces facing down . . washing or cleaning rear faces or edge faces of wafer during coating . . Spin coating methods other than JA05-JA15 . Roll coating . Deposition of resists on wafer surfaces
JA21 JA22 JA24 JA25 JA27
. Detection of resist film characteristics or film thickness . Combinations with other process treatment * . Temperature adjustment . Static electricity removal . Others *
H01L21/30,567 KA KA00
BAKING DEVICE 		KA01 KA02 KA03 KA04 KA05 KA07 KA08 KA09 KA10
. Heating means . . Infrared lamps . . Magnetrons or microwaves . . Heaters or hot plates . . Heated gases . accompanied by the conveyance of wafers . . Belt conveyers . . Walking beams . Others *
H01L21/30,569@A-21/30,569@Z LA LA00
WET DEVELOPING OR RINSING 		LA01 LA02 LA03 LA04 LA05 LA06 LA07 LA08 LA09
. Rotary treatment . . cleaning the rear faces or edge faces of wafers during treatment . . Feeding of treatment liquids and adjustment thereof . . Feeding nozzles . . Rotary chucks . . Treatment containers . . Intake, exhaust or drainage systems . . Rotary treatment methods other than LA02-LA07 . Developer tanks, i.e. dipping
LA11 LA12 LA13 LA14 LA15 LA17 LA18 LA19
. accompanied by the conveyance of wafers . Developers or rinsing liquids * . Temperature adjustment . Development or rinsing methods . Detection of development end points . Combinations with dry developing . Combinations with other process treatment * . Others *
H01L21/30,569@H LB LB00
DRY DEVELOPING 		LB01 LB02 LB03 LB06 LB07 LB09 LB10
. Plasma treatment . Direct removal of resists by exposure . . by ultra-violet radiation or light exposure . Ultra-violet radiation treatment . Heat treatment . Combinations with other treatment * . Others *
H01L21/30,572@A-21/30,572@Z MA MA00
PEELING OF RESIST FILM 		MA01 MA02 MA03 MA04 MA05 MA06 MA07 MA10
. Wet peeling . . Peeling liquids or separating compounds * . . Heating or boiling . . Combinations with ultra-violet radiation treatment . . Feeding of gases . . Control, adjustment, detection or indication . . Wet peeling methods other than MA02-MA06 . . Wet peeling devices
MA11 MA12 MA13 MA17 MA18 MA19
. Dry peeling . . Plasma treatment . . Ultra-violet radiation, oxygen or ozone treatment . Combinations of two or more peeling treatment . Combinations with other processing treatment * . Others *
H01L21/30,573 NA NA00
MULTILAYER RESIST FILM AND TREATMENT THEREOF 		NA01 NA02 NA03 NA04 NA05 NA06 NA07 NA08 NA09
. Two-layer resist films . . Lower layers being negative type and upper layers being positive type * . . Lower layers being negative type and upper layers also being negative type * . . Lower layers being positive type and upper layers being negative type * . . Lower layers being positive type and upper layers also being positive type * . Resist films of three or more layers . with intermediate layers other than resists between two layers of resists * . Lower layer resists having been exposed . Multilayer films formed of identical resists
NA11 NA12 NA13 NA14 NA15 NA16 NA17 NA18 NA19
. Treating methods . . Coating or baking . . Development . . . of upper layer resists . . . of lower layer resists . . Etching removal of resists . . . Dry etching . . . of lower layer resists . Others *
H01L21/30,574 PA PA00
LIGHT ABSORPTION OR REFLECTIVE FILM 		PA01 PA02 PA03 PA04 PA05 PA06 PA07 PA08 PA09 PA10
. Absorption films . . Silicon including polysilicon or amorphous silicon . . Oxidised films . . Nitride films . . Metals * . . Surface roughening . . Organic or macromolecular films * . . . Resists . . Dye or light-absorbing agents . . Blackening
PA11 PA12 PA13 PA17 PA18 PA19
. . Carbon or carbonised material films . . Adjustment of refractive indexes . . . Multilayer films . Reflective films . . Metals * . Others *
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