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F-Term-List

5F043 WET ETCHING
H01L21/306 -21/308@Z;21/465-21/467
H01L21/306@A-21/306@Z;21/308@A-21/308@Z;21/465-21/467 AA AA00
OBJECT TO BE ETCHED 		AA01 AA02 AA03 AA04 AA05 AA07 AA08 AA09 AA10
. Semiconductor substrates. . . Silicon substrates . . Gallium arsenide (Ga-As) substrates . . Solutions for indium phosphate (inP) . . Other substrates* . Semiconductor layers that are not substrates . . Single-layer structures . . . Single silicon layers . . . . Single layer of polycrystalline silicon
AA11 AA13 AA14 AA15 AA16 AA18 AA20
. . . . Amorphous silicon . . . Single layers from Groups III-V . . . . Solutions for gallium arsenide (Ga-As) . . . . Indium phosphate (InP) substrates . . . . Other substrates* . . . Single layers of materials other than silicon and Groups* . . Multiple conductive layers
AA21 AA22 AA23 AA24 AA25 AA26 AA27 AA28 AA29 AA30
. Conductive layers excluding semiconductors . . Metal layers . . . Single-layer structures . . . . Single aluminum layer . . . . Single gold layer . . . . Other metals* . . . Multi-layer structures . . Metal silicides . Insulating layers . . Single-layer structures
AA31 AA32 AA33 AA34 AA35 AA36 AA37 AA38 AA40
. . . Single layer of silicon dioxide . . . . Single thermally-oxdized layer of silicon dioxide . . . . Single chemical vapor-deposited layer of silicon dioxide . . . . Single layer of porous silicon dioxide . . . Single layer of silicon nitride (Si3N4) . . . Phosphosilicate glass . . . Other insulating layers* . . Multi-layer structures . Others*
BB BB00
ETCHING SOLUTIONS, WASHING SOLUTIONS, SURFACE TREATMENT SOLUTIONS 		BB01 BB02 BB03 BB04 BB06 BB07 BB08 BB10
. Solutions for silicon* . . Solutions for monocrystalline silicon* . . Solutions for polycrystalline silicon* . . Solutions for amorphous silicon* . Solutions for semiconductors made of compounds from Groups III-V* . . Solutions for gallium arsenide (Ga-As)* . . Solutions for indium phosphide (inP)* . . Others from Groups III-V*
BB12 BB14 BB15 BB16 BB17 BB18 BB19
. Solutions for semiconductors made of materials other than silicon and Groups III-V* . Solutions for conductive layers not made of semiconductors* . . Solutions for metals* . . . Solutions for aluminum* . . . Solutions for gold* . . . Solutions for other metals* . . Solutions for metal silicides*
BB21 BB22 BB23 BB24 BB25 BB27 BB28 BB30
. Solutions for insulators* . . Solutions for silicon dioxide (SiO2)* . . Solutions for silicon nitride (Si3N4)* . . Solutions for phosphosilicates glass (PSG)* . . Other insulating layers* . Cleaning solutions and surface treatment solutions* . . Variants containing surfactants* . Others*
CC CC00
RESIST 		CC01 CC02 CC03 CC05 CC06 CC07 CC09 CC10
. Resist characterized by the materials per se . . Polyimides . . Pyrolytic polymers . . Other resist materials . Film-like resists . Multiple resist layers . Processing of resist layers . . Pre-baking
CC11 CC12 CC14 CC16 CC17 CC20
. . Post-baking . . Developing . . Other processing* . Removing resist layers . . Variants in which cracks are produced . Others*
DD DD00
TREATMENT METHODS 		DD01 DD02 DD04 DD05 DD06 DD07 DD08 DD10
. Pre-treatment . . Pre-treatment of substrate surface . Etching under specific conditions . . Reduced pressure etching . . Pressure etching . . Heat etching . . Light etching . . Other conditions*
DD12 DD13 DD14 DD15 DD16 DD17 DD18 DD19 DD20
. Post-treatment . Spray etching . Electrolytic etching . Wet etching used with dry etching . Chemical polishing . Etching following ion implantation. . Lift-off techniques. . . Variants using ultrasonic . . Variants using overhang structures
DD21 DD22 DD23 DD24 DD25 DD26 DD27 DD30
. . Variants using space layers that are other than resist layers. . . Variants characterized by methods of metal thin film layer formation . Continuous methods and automation . Endpoint detection . . Variants using reflected light, transmitted light. . . Variants using changes in voltage and current. . Testing . Others*
EE EE00
APPARATUSES 		EE01 EE02 EE03 EE04 EE05 EE06 EE07 EE08 EE09 EE10
. Etching cells . . Multiple-cell types . . Sealed types . . Stirring portions. . . Portions that generate vibration. . . Portions that generate bubbles . . Spray portions (e.g., nozzles) . . Rotary tables . . Flow-directing plates . . Portions that control temperature
EE11 EE12 EE14 EE15 EE16
. . . Double-layer cells . . . Heaters . . Electrodes for electrolytic etching . . Packing and seals . . Cells characterised by cell materials
EE21 EE22 EE23 EE24 EE25 EE27 EE28 EE29 EE30
. Circulation of etching solution . . Temperature control and Heat exchange. . . Control concentration and purity. . . Circulation pumps . . Filtering and filters. . Supplying of etching solution and the like. . . Chemical storage tanks . . Measuring and quantifying . . Filtering (i.e., filters)
EE31 EE32 EE33 EE35 EE36 EE37 EE40
. . Portions that mix chemicals . Discharge . . Collecting, regenerating, and filtering. . Storing and holding wafers. . Apparatuses that move the objects to be worked (e.g., wafer transport mechanisms). . Gas discharge means (e.g., ducts). . Others*
FF FF00
CROSS-SECTIONAL SHAPES 		FF01 FF02 FF03 FF04 FF05 FF06 FF07 FF10
. Grooves (i.e., trenches) . Under etching. . Taper etching. . . Controlled taper angles . Mesa etching. . Through-holes . Leveling . Others*
GG GG00
PURPOSE AND APPLICATION 		GG01 GG02 GG03 GG04 GG05 GG06 GG10
. Wafer separation . Wiring . . Multi-layer wiring . Electrodes . Element Separation . Determination of crystal orientation . Others*
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