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5F033 Internal circuitry in semiconductor integrated circuit devices
H01L21/88 -21/90@Z
H01L21/88-21/90@Z GG GG00
SUBSTRATE MATERIALS EXCLUDING SILICON * 		GG01 GG02 GG03 GG04
. Compound semiconductors . . Groups III to V . Insulating substrates . . Translucent substrates
HH HH00
MATERIALS FOR A SINGLE WIRING LAYER OR UPPER WIRING LAYERS FOR INTERLAYER CONNECTION * 		HH01 HH03 HH04 HH05 HH06 HH07 HH08 HH09 HH10
. Semiconductor substrates . Semiconductors excluding substrates . . Polycrystal silicon . . Amorphous silicon . . Monocrystal silicon . Metal and alloys thereof excluding silicides * . . Al . . . Al alloys . . . . containing other metals than Si or Cu
HH11 HH12 HH13 HH14 HH15 HH16 HH17 HH18 HH19 HH20
. . Cu . . . Cu alloys . . Au or Au alloys . . Ag or Ag alloys . . Co or Co alloys . . Fe or Fe alloys . . High melting point metals . . . Ti . . . W . . . Mo
HH21 HH22 HH23 HH25 HH26 HH27 HH28 HH29 HH30
. . . Ta . . . Alloys being high melting point metals . . . . TiW . Silicides . . Silicides being a high melting point metal . . . TiSi . . . WSi . . . MoSi . . . TaSi
HH31 HH32 HH33 HH34 HH35 HH36 HH38 HH40
. Compounds * . . Nitrides . . . TiN . . . WN . . Oxides . . Carbides . Translucent conductive films . Superconducting materials
JJ JJ00
MATERIALS FOR CONTACT LAYERS FOR INTERLAYER CONNECTION * 		JJ01 JJ03 JJ04 JJ05 JJ06 JJ07 JJ08 JJ09 JJ10
. without contact layers or being integral with upper wiring layers . Semiconductors excluding substrates . . Polycrystal silicon . . Amorphous silicon . . Monocrystal silicon . Metals and alloys thereof excluding silicides * . . Al . . . Al alloys . . . . containing other metals than Si or Cu
JJ11 JJ12 JJ13 JJ14 JJ15 JJ16 JJ17 JJ18 JJ19 JJ20
. . Cu . . . Cu alloys . . Au or Au alloys . . Ag or Ag alloys . . Co or Co alloys . . Fe or Fe alloys . . High melting point metals . . . Ti . . . W . . . Mo
JJ21 JJ22 JJ23 JJ25 JJ26 JJ27 JJ28 JJ29 JJ30
. . . Ta . . . Alloys being high melting point metals . . . . TiW . Silicides . . Silicides being a high melting point metal . . . TiSi . . . WSi . . . MoSi . . . TaSi
JJ31 JJ32 JJ33 JJ34 JJ35 JJ36 JJ38 JJ40
. Compounds * . . Nitrides . . . TiN . . . WN . . Oxides . . Carbides . Translucent conductive films . Superconducting materials
KK KK00
MATERIALS FOR LOWER WIRING LAYERS FOR INTERLAYER CONNECTION * 		KK01 KK03 KK04 KK05 KK06 KK07 KK08 KK09 KK10
. Semiconductor substrates . Semiconductors excluding substrates . . Polycrystal silicon . . Amorphous silicon . . Monocrystal silicon . Metals and alloys thereof excluding silicides * . . Al . . . Al alloys . . . . containing other metals than Si or Cu
KK11 KK12 KK13 KK14 KK15 KK16 KK17 KK18 KK19 KK20
. . Cu . . . Cu alloys . . Au or Au alloys . . Ag or Ag alloys . . Co or Co alloys . . Fe or Fe alloys . . High melting point metals . . . Ti . . . W . . . Mo
KK21 KK22 KK23 KK25 KK26 KK27 KK28 KK29 KK30
. . . Ta . . . Alloys being high melting point metals . . . . TiW . Silicides . . Silicides being a high melting point metal . . . TiSi . . . WSi . . . MoSi . . . TaSi
KK31 KK32 KK33 KK34 KK35 KK36 KK38 KK40
. Compounds * . . Nitrides . . . TiN . . . WN . . Oxides . . Carbides . Translucent conductive films . Superconducting materials
LL LL00
FEATURES OF CONDUCTIVE FILMS * 		LL01 LL02 LL03 LL04 LL06 LL07 LL08 LL09 LL10
. containing impurities or ions * . . Metals . . Oxygen and nitrogen series . . As B or P series . characterised by crystallinity . . characterised by crystal surface . . characterised by crystal grain size . characterised by composition ratio . . Composition ratio of silicide or compounds being different from its theoretical ratio
MM MM00
FEATURES OF WIRING STRUCTURES OR SHAPES * 		MM01 MM02 MM03 MM04 MM05 MM07 MM08 MM09 MM10
. Embedded-type wirings or damascenes . . Dual damascenes . Cross-sectional structures of wirings . . Wirings consisting of two or more kinds of conductive layers . . . Layers . . . . Polycides . . . . Three or more layers . . . . Unhorizontal interfaces . . . Side faces
MM11 MM12 MM13 MM14 MM15 MM17 MM18 MM19 MM20
. . . Top faces and side faces . . . Side faces and bottom faces . . . involving barrier layers . . . Intermediate layers being interfaces . . Lamination structure with insulating films . Cross-sectional shapes . . in the shape of T Y inverted L or inverted T . . Trapezoidal shapes . . having different thicknesses
MM21 MM22 MM23 MM25 MM26 MM28 MM29 MM30
. Plane shapes . . having slits . . having uneven surfaces . Surface configuration . . having uneven or serpentine surface . A plurality of wirings with different film thicknesses . A plurality of wirings with different line widths . Wirings inside or on back side of the substrate
NN NN00
FEATURES OF INTERLAYER STRUCTURES * 		NN01 NN02 NN03 NN05 NN06 NN07 NN08 NN09
. Contact hole filling structures . . having interposed layers . . . Layers . . . Side faces . . . Side faces and bottom faces . . . involving barrier layers . . Filling up a plurality of contact holes having different depths . . Filling up a plurality of contact holes having different sizes
NN11 NN12 NN13 NN14 NN15 NN16 NN17 NN19 NN20
. characterised by wiring structure of contact-section . . characterised by contact structures . . . in contact with a concave of lower layer wirings (a wiring passing-through the layer NN16) . . . in contact with a convex of lower layer wiring . . . Contact plugs being protruded from insulation films . . . passing through a lower layer wiring or an upper layer wiring . . . removing a part of interposed layer . Pillar pedestal . Application of lower lead-out electrode
NN21 NN29 NN30
. characterised by crossings of wirings . characterised by the shapes of contact holes . . Cross sections having other shapes than rectangle
NN31 NN32 NN33 NN34 NN37 NN38 NN39 NN40
. . . Enlarged upper portion or contact pad . . . . having forward tapered portions . . Plane shapes of contact holes . . . characterised by the size or the number of contact holes . Wiring layer of contact hole being spread across three or more layers . . Relay pads . . Simultaneous connecting of three or more layers . . Electrical insulation of intermediate layers
PP PP00
METHODS OF FORMING CONDUCTIVE FILMS * 		PP01 PP02 PP03 PP04 PP06 PP07 PP08 PP09 PP10
. Raw material gases * . . Organic gases * . . Inorganic gases * . . . Halides * . CVD or chemical vapour deposition method . . Selective CVD . . . Enhanced selectivity . . LPCVD or low pressure CVD . . Photo assisted CVD
PP11 PP12 PP14 PP15 PP16 PP17 PP18 PP19 PP20
. . MOCVD or organometallic CVD . . Plasma CVD . PVD or physical vapour deposition . . Sputtering . . . Reactive sputtering . . . Biased sputtering . . . High temperature sputtering or reflow sputtering . . Vacuum evaporations . . Ion beam evaporation or plating
PP21 PP22 PP23 PP24 PP26 PP27 PP28
. controlling the film forming direction . . applying collimators . . applying a bias . . accompanying chemical etchings . Coatings or liquid film forming . . Electrolytic plating . . Electroless plating
PP31 PP33 PP35 PP36
. using energy beams . Growth of the same film in two or more steps . by replacing with or exchanging for other substances . . replacing or exchanging Si
QQ QQ00
METHODS OF FORMING PATTERNS; METHODS OF TREATING SUBSTRATES, CONDUCTIVE FILMS OR INSULATING FILMS * 		QQ01 QQ02 QQ03 QQ04 QQ06 QQ07 QQ08 QQ09 QQ10
. Photo exposure . . relating to reflection preventions . . . using reflection preventing films being conductive films . . . using reflection preventing films being insulating films . Etchings . . Objects of etchings . . . Conductive films . . . Insulating films . . . Laminated films
QQ11 QQ12 QQ13 QQ14 QQ15 QQ16 QQ17 QQ18 QQ19 QQ20
. . Dry etchings . . . Plasma etchings . . . Reactive ion etchings (RIE) . . . Ion millings or sputter etchings . . . characterised by claimed etching gas . . . Anisotropic etchings . . . . Oblique etchings . . . Isotropic etchings . . Wet etchings . . . characterised by claimed etchants.
QQ21 QQ22 QQ23 QQ24 QQ25 QQ26 QQ27 QQ28 QQ29 QQ30
. . Multistep etchings . . . Combined applications of an anisotropic etching and an isotropic etching . . Etching stoppers . . . Conductive films . . . Insulating film . . Etching masks . . . Conductive films . . . Insulating films . . . Multilayer resists . . . leaving masks after etching
QQ31 QQ32 QQ33 QQ34 QQ35 QQ37 QQ38 QQ39
. . Etching backs . . Removal of protrusions excluding etching back or polishing . . Side etching under etching . . Tapered etchings . . Application of different etching rate . . Formation of contact holes . . . Etching of plural holes having different depths . . . . Simultaneous etchings
QQ41 QQ42 QQ43 QQ44 QQ46 QQ47 QQ48 QQ49 QQ50
. Lift-offs . . Lift-off materials . . . Other than photoresists . . . combined with etching masks . Polishing . . Mechanical polishing . . Chemical mechanical polishing or CMP . . Stopper films or polishing rate adjusting films . . characterised by claimed polishing agents or polishing liquids
QQ51 QQ52 QQ53 QQ54 QQ56 QQ57 QQ58 QQ59 QQ60
. Energy beam irradiation (film formation PP31) . . Objects of irradiation . . . Substrate or conductive film . . . Insulating films . Impurity introductions or ion implantations . . Objects of introductions or implantations . . . Substrates . . . Conductive films . . . Insulation films
QQ61 QQ62 QQ63 QQ64 QQ65 QQ66 QQ68 QQ69 QQ70
. . Substances to be introduced or implanted . . . Metals . . . Oxygen . . . Nitrogen . . . As P or B series . . . Halogens . Pattern formations by selective conduction or insulation . Alloying processings (also covers thermal processing) . . Silicidings
QQ71 QQ72 QQ73 QQ74 QQ75 QQ76 QQ77 QQ78 QQ79 QQ80
. Thermal processings . . Objects of thermal processings . . . Conductive films or substrates . . . Insulating films . . Reflows . . Thermal oxidations (thermal processings other than thermal oxidations QQ89) . . . Selective oxidations . . Thermal nitridings (thermal processings other than thermal nitriding QQ90) . . Thermal diffusions . . . Solid phase diffusions
QQ81 QQ82 QQ83 QQ84 QQ85 QQ86 QQ88 QQ89 QQ90
. . Heating means . . . Lamp annealing . . . Laser annealing . . applying thermal processing consecutively for two or more times . . Thermal processing in vacuum or under reduced pressure . . Thermal processing under high pressures . Cooling excluding natural cooling . Oxidation processings (thermal oxidations QQ76) . Nitriding processings (thermal nitriding QQ78)
QQ91 QQ92 QQ93 QQ94 QQ95 QQ96 QQ98 QQ99
. Cleanings . . Cleanings of contact hole sections . . Removed objects . . . Oxides or oxide films . . . Fluorides or fluorine . . . Organic substances . Continuous processing without exposure to the air or the atmosphere . changing shapes by external forces
RR RR00
MATERIALS FOR INSULATING FILMS * 		RR01 RR02 RR03 RR04 RR05 RR06 RR07 RR08 RR09
. Inorganic materials * . . Oxides . . . Metal oxides . . . SiO2 . . Nitrides . . . SiN . . Oxynitrides . . . SiON . . Inorganic SOG films being inorganic substance or undetermined substances
RR11 RR12 RR13 RR14 RR15 RR20
. . containing halogens including SiOF . . containing impurities . . . BSG . . . PSG . . . BPSG . . characterised by composition ratio
RR21 RR22 RR23 RR24 RR25 RR26 RR27 RR29 RR30
. Organic materials * . . Polyimide resins . . Silicone resins . . Fluorinated resins . . Organic SOG films or organic substances . . containing impurities . . having photosensitivity . Partial aerating e.g. pores or cavities . Air insulations or air bridges
SS SS00
METHODS OF FORMING INSULATING FILMS * 		SS01 SS02 SS03 SS04 SS07 SS08 SS09 SS10
. Raw material gases * . . Inorganic silane gases * . . Organic silane gases * . . . TEOS . PVD or physical vapour deposition method . . Sputtering . . . Reactive sputtering . . Vacuum evaporations
SS11 SS12 SS13 SS14 SS15 SS17 SS18 SS19 SS20
. CVD or chemical vapour deposition methods . . Atmospheric pressure CVD . . LPCVD or low pressure CVD . . Photo assisted CVD . . Plasma CVD . Directivity control of film forming . . applying collimators . . applying a bias . . combined with chemical etchings
SS21 SS22 SS24 SS25 SS26 SS27 SS30
. Coatings . . Being sintered after coating . converting substrates or conductive films . . converting semiconductors . . converting metals . . converting by thermal oxidation (also classified in QQ73 or QQ76) . Deposition from liquid phase
TT TT00
STRUCTURES OR SHAPES OF INSULATING FILMS * 		TT01 TT02 TT03 TT04 TT06 TT07 TT08
. Lamination structures . . entirely formed of inorganic materials . . entirely formed of organic materials . . Combinations of inorganic materials and organic materials . Sidewall insulation films . . Sidewalls of contact holes . . Sidewalls of electrodes or wirings
UU UU00
LAYOUTS OR SIMULATIONS 		UU01 UU02 UU03 UU04 UU05 UU07
. Designs or layouts of wirings . . for master slices . . relating to the same layer only . . across multilayer . . . Three or more layers . Simulation
VV VV00
APPLICATIONS OF WIRINGS * 		VV01 VV02 VV03 VV04 VV05 VV06 VV07 VV08 VV09 VV10
. Dummy wirings . . Removing of level differences . Shields . Power supply lines . Grounding wires . Gate electrode wirings . Bonding pads or bump electrodes . Passive elements . . Resistors . . Capacitors
VV11 VV12 VV13 VV15 VV16 VV17
. Fuses or antifuses . Inspections or testing . Micromachines . for TFTs . for memories . for gate arrays
WW WW00
CLAIMED NUMERICAL LIMITATIONS * 		WW01 WW02 WW03 WW04 WW05 WW06 WW07 WW08 WW09 WW10
. Lengths or sizes . . Thickness . Temperatures . Concentrations . Pressures . Flow rates . Energies . Voltages or electric currents . Dielectric constants or capacitances . changing parameters in the midst of process
XX XX00
PURPOSES OR EFFECTS * 		XX01 XX02 XX03 XX04 XX05 XX06 XX07 XX08 XX09 XX10
. Planarisations . Improvements of step coverage or preventions of bench cuts . Refinements . . High aspect ratio . preventing electromigrations . preventing stress migrations . Improvements in ohmic properties . Reduction in resistance . . Reduction in contact resistance . . Reduction in sheet resistance
XX11 XX12 XX13 XX14 XX15 XX16 XX17 XX18 XX19 XX20
. Melting point lowering . Improvements in adhesion . . Improvement in adhesion between substrate and wiring or wiring to wiring . . Improvement in adhesions between wiring and insulating film . Countermeasure against deviations of etching masks . preventing hillocks . preventing cracks or distortions . preventing corrosions . Applications of stresses or reductions of stresses . preventing oxidation
XX21 XX22 XX23 XX24 XX25 XX26 XX27 XX28 XX29 XX30
. removing residues . Heat radiations . preventing interference between substrate and wiring or wiring to wiring . . reducing capacitance between substrate and wiring or between wirings . . . reducing capacitance on the same layer . . preventing parasitic channels . Signal delay preventions or synchronisation of signal transmissions . preventing diffusions or running through . . preventing diffusions or running through of silicon . . preventing diffusions or running through of aluminium
XX31 XX32 XX33 XX34 XX35 XX36 XX37
. preventing short circuits . Light shielding . Simplification of manufacturing processes . Reduction of manufacturing cost . Control of film thickness during film forming . Repair of wirings . Inspections or tests
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