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F-Term-List

5F032 ELEMENT SEPARATION
H01L21/70 -21/76@Z
H01L21/76-21/76@Z AA AA00
SEPARATION USING INSULATION 		AA01 AA02 AA03 AA04 AA06 AA07 AA08 AA09 AA10
. between side surfaces and bottom surfaces of element regions . . forming support substrates by deposition (See CA09-CA11) . . . having insulating film placed between support substrates and element regions (See CA09-CA11) . . . having support substrates composed of plural layers (See CA09-CA11) . . forming support substrates by bonding (See DA71) . . forming insulations by ion implantation . . forming insulation by sneaking oxidation . . growing element regions on insulation . . . using monocrystalline insulations e.g. silicon on sapphire or spinel (SOS)
AA11 AA12 AA13 AA14 AA15 AA16 AA18 AA19
. separating the side surfaces of element regions using insulations . . by insulating . . . by selective oxidation e.g. local oxidation of silicon (LOCOS) . . . . oxidising the inside of trenches . . . . . having anti-oxidation masks that are also present inside trenches . . . . . of deep grooves or trenches . . . . Anti-oxidation masks directly contacting with substrates . . . . using porous oxidation
AA23 AA25 AA26 AA28
. . . Oxidation separation without using anti-oxidation masks . . . using oxides obtained by oxidising between a plurality of trenches . . . . adding other embedding means . . . forming insulations by ion implantation
AA32 AA33 AA34 AA35 AA36 AA37 AA39 AA40
. . by filling trenches . . . Cross-sectional shapes of trenches . . . . having vertical side surfaces . . . . . Deep grooves or trenches . . . . . having taper at the top of trench . . . . . tapered at the bottom of trenches . . . . without vertical side surfaces . . . . . V-grooves or variations thereof
AA43 AA44 AA45 AA46 AA47 AA48 AA49 AA50
. . . Materials to be embedded . . . . Silicon oxide . . . . . formed in a layer directly on trench surfaces . . . . Silicon nitride . . . . Polycrystal silicon or amorphous silicon . . . . . doped with impurities . . . . Glass e.g. phosphosilicate glass (PSG) borosilicate glass (BSG) or arsenosilicate glass (ASG) . . . . Organic materials
AA54
. . . . Others *
AA63 AA64 AA66 AA67 AA69 AA70
. . . imparting potential to conductive layers in trenches . . . . to substrates . . . designed for cutting trenches (see DA for details) . . . . over several times (See DA for details) . . . designed for filling trenches (See DA for details) . . . . over several times (See DA for details)
AA74 AA75 AA76 AA77 AA78 AA79 AA80
. . . . oxidising materials to be embedded . . . . . oxidising a part of materials to be embedded . . . . Selective filling of trenches* . . . . . Grinding or polishing (See DA33) . . . . . Etching entire surfaces (See DA34) . . . . . Selective etching (See DA22-DA30) . . . . . Lift-off (See DA32)
AA82 AA84
. . Element regions being formed subsequently i.e. selective epitaxial . . forming element regions and separated regions simultaneously
AA91
. separating only the bottom surfaces of element regions using insulations
AB AB00
SEPARATION USING PN JUNCTION 		AB01 AB02 AB03 AB04 AB05
. separating side surfaces or bottom surfaces of element regions by using PN junctions . separating only the side surfaces of element regions by PN junctions . separating only the bottom surfaces of element regions by PN junctions . using polycrystal semiconductors of the inverse conduction type or amorphous semiconductors . imparting potential to isolation regions
AC AC00
SPECIAL SEPARATION 		AC01 AC02 AC03 AC04
. by using channel stoppers . by using air or spaces . separating element regions vertically . Other separation techniques e.g. field shield electrodes or the like*
BA BA00
SHAPE OR ARRANGEMENT 		BA01 BA02 BA03 BA05 BA06 BA08 BA10
. Shapes of isolation regions e.g. cross-sections or plane views . . with different widths . . with different thicknesses . Shapes of element regions e.g. cross sections or plane views . . with different thicknesses . Arrangement of element regions . Nested structures
BB BB00
COMBINATION 		BB01 BB03 BB04 BB06 BB08
. of different types of separation techniques . of separation and passive elements . . with passive elements being capacitors . of separation and active elements . of separation and wiring
CA CA00
RELATED TECHNIQUE 		CA01 CA03 CA05 CA06 CA07 CA09 CA10
. Buried layers . Wells . Materials of element regions excluding single crystal silicon * . . Gallium arsenide . . Polycrystal silicon or amorphous silicon . Materials of substrates excluding single crystal silicon * . . Gallium arsenide (GaAs)
CA11 CA13 CA14 CA15 CA16 CA17 CA18 CA19 CA20
. . Polycrystal silicon or amorphous silicon . Types of elements formed in element regions . . Passive elements i.e. L C R . . Diodes . . Field-effect transistors . . . Metal-oxide semiconductor (MOS) transistors . . Bipolar transistors . . Thyristors . . Complementary
CA21 CA23 CA24 CA25
. . Other elements * . Use for element regions * . . for high voltage or high breakdown voltage . . for low voltage or low breakdown voltage
DA DA00
MANUFACTURING METHOD 		DA01 DA02 DA03 DA04 DA06 DA07 DA09 DA10
. Deposition or growth * . . Chemical vapour deposition (CVD) . . . Low-pressure chemical vapour deposition (CVD) . . . Plasma chemical vapour deposition (CVD) . . Physical vapour deposition . . . Sputtering . . Coating . . . Spin coating
DA12 DA13 DA14 DA16
. . Epitaxial growth . . . of different substances . . . Simultaneous growth of polycrystals or amorphous substances and monocrystals . . Selective deposition or growth
DA21 DA22 DA23 DA24 DA25 DA26 DA27 DA28 DA29 DA30
. Removal * . . Etching . . . Dry etching . . . Wet etching . . . Anisotropic etching . . . Isotropic etching . . . Side etching . . . Selective etching using differences in etching rates . . . . using differences in types of conduction or concentration of impurities . . . leaving side walls
DA32 DA33 DA34
. . Lift-off (See AA80) . . Grinding or polishing (see AA77) . . Etching entire surfaces (see AA78)
DA41 DA42 DA43 DA44 DA45 DA47 DA48
. Modification* . . Diffusion of impurities . . . Ion implantation . . . . into trenches . . . Vapour-phase diffusion . . . Solid-phase diffusion . . . . from insulations
DA52 DA53 DA54 DA55 DA57 DA58 DA60
. . Insulating . . . Oxidation . . . . Anodic oxidation . . . . Porous oxidation . . . Nitriding . . . . Thermal nitriding . . using ion implantation
DA63 DA67
. . using crystal defects or lifetime killers . . making silicon porous
DA71 DA74 DA77 DA78 DA80
. Joining or bonding of wafers (See AA06) . Heat treatments excluding thermal oxidation and thermal nitriding . Treatments in an oblique direction e.g. ion implantation or etching . Flattening . Omissions of mask processes e.g. self-alignment
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