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5F004 Dry etching of semiconductors
H01L21/302 -21/302,400;21/461
H01L21/302-21/302,400;21/461 AA AA00
PURPOSES 		AA01 AA02 AA03 AA04 AA05 AA06 AA07 AA08 AA09
. Improvement of uniformity . Improvement of selectivity . . Change of etching speeds . . Improvement of etching masks . . Improvement of etching conditions . Reduction of damages . Recovery from damages . Prevention of changes of surface qualities . Shaping of patterns, removal of residues
AA11 AA12 AA13 AA14 AA15 AA16
. Flattening, prevention of step cuts . . Tapering of contact holes . Cleaning . . Cleaning of substrates . . Cleaning of inner walls of devices . Others (*)
BA BA00
BASIC CONFIGURATIONS OF DEVICES 		BA01 BA02 BA03 BA04 BA05 BA06 BA07 BA08 BA09
. Barrel type, cylinder type . . Etching tunnels . Plasma generating chamber isolation . Parallel plate type . . Third electrodes, triode type . . Electrode shapes . . Distance between electrodes . . Magnetron RIE . . Two power source type
BA11 BA12 BA13 BA14 BA15 BA16 BA17 BA18 BA19 BA20
. Ion beam type, ion shower type . . Kaufman type . . Magnetron type . . ECR type . . . Quartz pipe type . . . Introduction window type . . Beam scanning type . Hexode type . Gaseous phase treatment type . Others (*)
BB BB00
INTERNAL CONFIGURATIONS OF GENERATION CHAMBERS, REACTION CHAMBERS, TREATMENT CHAMBERS, OR THE LIKE 		BB01 BB02 BB03 BB04 BB05 BB07 BB08
. Electron beam irradiation . Optical irradiation . . Lasers (*) . . . Excimer lasers (*) . . Lamps (*) . Magnetic field configurations . . Movable type
BB11 BB12 BB13 BB14 BB15 BB16 BB17 BB18 BB19 BB20
. Applied power frequency . . Direct current . . RF (High frequencies) . . Microwaves . Holding of wafers . . Vertical type . . Holding to direct treatment surfaces downward . . Sheet type . . Batch type . . Wafer fixing
BB21 BB22 BB23 BB24 BB25 BB26 BB27 BB28 BB29 BB30
. . . Mechanical fixing . . . Electrical fixing . . Covers for wafer surroundings . . Moving type . Cooling of wafers . Heating of wafers . . Lamp annealing . Flow ways of gases . Material of inner walls, specimen supports . . Coating with resins or the like (*)
BB31 BB32
. Light reflecting plates . Others
BC BC00
DETAILS OF DEVICES 		BC01 BC02 BC03 BC04 BC05 BC06 BC07 BC08
. Vacuum sealing methods . Vacuum pumps, gas traps . Gas pipes, valves, flow control . Reuse of gases or the like . Spare vacuum chambers . Wafer carrying . Ozone generators . Others
BD BD00
SPECIFIED APPLICATIONS OF DEVICES 		BD01 BD02 BD03 BD04 BD05 BD06 BD07
. Ashing devices . Etching devices for Al . Low temperature dry etching devices . CVD devices . Sputtering devices . Ion implantation devices . Others (*)
CA CA00
METHODS FOR OPERATIONS, CONTROLS OF DEVICES 		CA01 CA02 CA03 CA04 CA05 CA06 CA07 CA08 CA09
. Switching of gases . Gas pressure, flow . Applied power, voltage . Substrate temperature . Movement of electrodes, specimen supports or the like . Self-bias . Processing at the time of starting . Setting methods of conditions . Others (*)
CB CB00
MONITORING 		CB01 CB02 CB03 CB04 CB05 CB06 CB07 CB08 CB09 CB10
. Monitoring methods (*) . . Spectroscopic analysis methods (*) . . Gas analysis methods . . . Mass spectrometry . . Electrical methods . . . Probes . . . Discharge impedances . . . Resistance values . . Optical methods (*) . . . Laser interferometry (*)
CB11 CB12 CB13 CB14 CB15 CB16 CB17 CB18 CB20
. . Time control methods . . Temperature measuring methods . . Patterns for monitors . Employment of monitor only regions . Methods for determining ending points . . Processing of detected waveforms . . . Elimination of noise components . . Overetching time . Others
DA DA00
GASES USING FOR TREATMENT (*) 		DA01 DA02 DA03 DA04 DA05 DA06 DA07 DA08 DA09 DA10
. CF4 . C2F6 . C3F8 . Cl2 . CCl4 . CCl2F2 . CClF3 . C2Cl2F4 . C2Cl3F3 . CBrF3
DA11 DA12 DA13 DA14 DA15 DA16 DA17 DA18 DA19 DA20
. BCl3 . PCl3 . SiCl4 . CHCl3 . CH2F2 . CHF3 . NF3 . SF6 . XeF2 . HF
DA21 DA22 DA23 DA24 DA25 DA26 DA27 DA28 DA29 DA30
. Air . He . Ar . H2 . N2 . O2 . O3 . NO2 . HCl . Change of mixing quantities
DB DB00
ETCHED SUBSTANCES (*) 		DB01 DB02 DB03 DB04 DB05 DB06 DB07 DB08 DB09 DB10
. Si . . Polycrystalline Si . SiO2 . . PSG . . BSG . . BPSG . Si3N4 . Metals . . Al . . W
DB12 DB13 DB14 DB15 DB16 DB17 DB18 DB19 DB20
. Metal compounds . . Metal oxides . . . Al2O3 . . Metal silicides . . . Al silicides, Al-Si . . . W silicides . . . Mo silicides . Semiconductor compounds . . GaAs
DB21 DB22 DB23 DB24 DB25 DB26 DB27 DB28 DB29 DB30
. . GaAlAs . . InP . Polymer materials . . Silicone resins . . Polyimide resins . . Photoresists . . Resists for electron beam exposure . Impurity adding materials . Magnetic materials . Amorphous
DB31 DB32
. Transparent conductive films . Face orientation
EA EA00
PATTERN FORMATION TECHNIQUES 		EA01 EA02 EA03 EA04 EA05 EA06 EA07 EA08 EA09 EA10
. Mask configurations . . Multilayer resist masks . . Etching masks other than resists . . . Oxidization, change in quality, polymerization films . . . Metal films . . . SiO2 films . . . Si3N4 films . . Masks other than rectangles . Underetching, side etching . Wet etching
EA11 EA12 EA13 EA14 EA15 EA16 EA17 EA18 EA19 EA20
. Sidewalls . . Residual formation . . Formation of sidewall protection films . . Alteration formation . Reversed etching . Removed patterns . Lift-off . . Insulating film patterns . Oblique ion beam incidence, vapor deposition . Peripheral etching
EA21 EA22 EA23 EA24 EA25 EA26 EA27 EA28 EA29 EA30
. Dummy . Reflection prevention films . Etching stoppers . Flow processes . . Thermal softening . . Liquid application . Etching back . Multistep etching . . Isotropic etching plus anisotropic etching . Low-temperature dry etching
EA31 EA32 EA33 EA34 EA35 EA36 EA37 EA38 EA39 EA40
. Bias sputtering . Simultaneous etching of different regions . Positioning . Gaseous phase etching . . Hot molecules . . Dry-OX methods . Control of etching shapes . Maskless etching . . FIB . Others
EB EB00
FUNCTIONS OF ETCHING OBJECT PARTS 		EB01 EB02 EB03 EB04 EB05 EB06 EB07 EB08
. Contact holes . Electrodes, wiring . Interlayer insulation films . Separation grooves . Groove type capacitors . Blazed grids . Exposure masks . Others
FA FA00
TREATMENT BEFORE AND AFTER ETCHING PROCESSES 		FA01 FA02 FA03 FA04 FA05 FA06 FA07 FA08
. Thermal treatment . Ion implantation (*) . Impurity doping . Electron beam irradiation . Laser irradiation . Mechanical damage . Light etching . Others (*)
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