F-Term-List

G02F1/136-1/1368

AA00
DISPLAY SYSTEMS

AA01

. Segment display

AA11

AA12

. Matrix display

. . Simple matrices

AA22

AA23

AA24

AA25

. . Active matrices

. . . Two-terminal elements

. . . Three-terminal elements

. . . Active elements or wiring for active elements between substrates

AA32

AA33

. . Split matrices

. . Multiple matrices

AA42

AA43

AA44

AA45

AA46

. . Structures different by pixel

. . . Display electrodes different by pixel

. . . Active elements different by pixel

. . . Capacitive elements different by pixel

. . . Multi gaps (excluding transmittance reflective multi)

AA51

. Multiple display regions (excluding split matrices)

AA61

AA62

AA63

. Multiple panels

. . Laminating multiple panels and liquid crystal layers

. . Plane arrangement of multiple panels (enlarging screens)

BA00
DISPLAY ELECTRODES (VERTICAL ELECTRIC FIELD)

BA01

BA02

. characterized by display electrodes (pixel electrodes, counter electrodes)

. . characterized by the sectional shapes of display electrodes (excluding scattering reflection)

BA12

BA13

BA14

BA15

BA16

BA17

. . characterized by the planar shapes of display electrodes (excluding orientation regulation)

. . . characterized by the shapes of pixel electrodes

. . . characterized by the shapes of common or segment wiring

. . . characterized by the shapes of counter wiring for two-terminal elements

. . . characterized by the shapes of counter electrodes for three-terminal elements

. . . . Divided counter electrodes

BA22

BA23

BA24

BA25

. . Shapes of electrodes for orientation regulation

. . . Openings or slits

. . . . Dot-shaped openings

. . . . Linear openings or slits

BA32

. . Counter electrodes not positioned opposed to pixel electrodes or oblique electric fields

BA42

. . Display electrodes being multilayer electrodes (excluding transmitted reflection)

BA51

. Wiring for display electrodes (auxiliary wiring)

BB00
DISPLAY ELECTRODES (HORIZONTAL ELECTRIC FIELD)

BB01

BB02

BB03

BB04

. Horizontal electric fields between linear electrodes

. . Display electrodes formed at the upper layer than counter electrodes

. . Counter electrodes formed at the same layer as counter electrodes

. . Display electrodes formed at the lower layer than counter electrodes

BB11

BB12

BB13

. Horizontal electric fields composed of linear electrodes and planar electrodes

. . Pixel electrodes being planar electrodes

. . Counter electrodes being planar electrodes

BB21

. Horizontal electric fields composed of three electrodes or more

BB31

BB32

BB33

. Electrodes also provided at counter substrates

. . Electrodes for applying horizontal electric fields also provided at counter substrates

. . Combination of vertical electric fields combined and horizontal electric fields

BB41

BB42

. characterized by display electrodes (pixel electrodes, counter electrodes)

. . Sectional shapes of display electrodes (excluding scattering reflection)

BB52

BB53

BB54

BB55

. . characterized by the planar shapes of display electrodes

. . . Horizontal electric field direction division << = ll

. . . . dividing into three or more directions, curved electrodes

. . . . characterized by the shapes of the electrodes at the boundary of division regions

BB63

BB64

BB66

. . . having different gaps between pixel electrodes and counter electrodes

. . . . having different widths/gaps of parallel electrodes

. . . characterized by the shapes of the electrodes at the end of display electrodes

BB72

BB73

. . Display electrodes being multilayer electrodes

. . Linear display electrodes being transparent electrodes

BB81

BB82

BB83

BB84

BB86

. characterized by wiring for counter electrodes

. . characterized by the shapes of wiring for counter electrodes

. . . redundant, parallel (excluding grid-like wiring)

. . . Wiring parallel to signal wiring, grid-like wiring

. . Multilayer wiring structures

BB91

. Counter electrodes connected to active elements

BC00
DISPLAY ELECTRODES (COMMON)

BC01

BC02

. characterized by pixel arrays

. . Delta arrays

BC11

BC12

BC13

BC14

. Sub-pixels

. . Sub-pixels to which the same voltage is applied

. . . connecting island-shaped sub-pixel electrodes

. . . Redundancy configuration

BC22

BC23

BC24

BC26

. . Sub-pixels to which different voltages are applied

. . . Capacitive coupling between sub-pixel electrodes

. . . Active elements by sub-pixel

. . changing voltages of sub-pixels after the same voltage is applied to them

BC31

BC32

BC33

BC34

BC35

. Display electrodes connecting through contact holes

. . characterized by contact holes

. . . characterized by the shapes of contact holes

. . . characterized by the structure of upper layers of contact holes

. . . characterized by the structure of lower layers of contact holes

BC42

BC44

. . characterized by connection electrodes between pixel electrodes and active elements

. . . forming pixel electrodes at a layer lower than active elements

BC51

. Electrodes regulating orientation

BC61

BC62

BC63

BC64

. Reflection types or transmissive reflection types (excluding photoconductor layers)

. . Transmissive reflection display

. . . Transmissive regions and reflective regions

. . . . Multi gaps

BC72

BC74

BC75

BC77

. . Display electrodes being reflective electrodes

. . Reflective electrodes different from display electrodes

. . . Dielectric multilayer films or reflection increasing films

. . Reflective layers or reflective electrodes at counter substrates

BC82

BC83

BC85

. . Scattering reflection (omni-directional)

. . . characterized by the shape of reflective surfaces

. . Directional reflection

CA00
TWO-TERMINAL ELEMENTS

CA01

CA02

CA03

. Types of two-terminal elements

. . MIM elements

. . Semiconductor elements (excluding photoconductor elements)

CA11

CA12

. Multiple active elements arranged at a single (sub-) pixel electrode

. . Back-to-back, diode rings

CA21

. characterized by the shapes of two-terminal elements

CA31

CA32

CA33

. characterized by scan wiring

. . . characterized by the shapes of scan wiring

. . Multilayer wiring structures

CB00
THREE-TERMINAL ELEMENTS (ELEMENT STRUCTURES)

CB01

CB02

CB03

CB05

CB06

CB08

. Types of three-terminal elements

. . Top gate (gate on semiconductors)

. . . Sequential staggered types (S.D under semiconductors)

. . Bottom gate (gate under semiconductors)

. . . Inverted coplanar types (S.D under semiconductors)

. . Top and bottom gate (gate at the top and bottom of semiconductors)

CB11

CB12

CB13

CB14

. Multiple active elements arranged at a single (sub-) pixel electrode

. . Multiple active elements for pixel switching

. . . Serial arrangement

. . . Parallel arrangement

CB22

CB23

CB24

CB26

. . Circuits in pixels for liquid crystal control

. . . Memory circuits

. . . having complementary transistors

. . Circuits for non liquid crystal control (excluding sensor circuits)

CB31

CB32

CB33

CB34

CB35

CB36

CB37

. characterized by semiconductor layers or impurity semiconductor layers

. . characterized by materials of semiconductors

. . . characterized by single crystal semiconductors

. . . characterized by polycrystalline semiconductors

. . . characterized by amorphous semiconductors

. . . Organic semiconductors

. . . Oxide semiconductors

CB42

CB44

CB45

CB46

. . characterized by the sectional shape of (impurity) semiconductor layers

. . characterized by the planar shape of (impurity) semiconductor layers

. . . characterized by the planar shapes of elements

. . . forming (impurity) semiconductor layers at signal wiring regions

CB52

CB53

CB54

CB56

. . characterized by channel regions

. . characterized by impurity regions or LDD

. . characterized by impurity semiconductor layers

. . Multilayer semiconductors or multilayer impurity semiconductors

CB61

. Low resistance layers (excluding impurity semiconductor layers)

CB71

CB72

. Channel protective films

. . characterized by the shapes of channel protective films

CB81

CB82

CB83

. characterized by gate insulating films

. . characterized by the shape of gate insulating films

. . Multilayer gate insulating films (excluding anodized films)

CC00
TERMINAL ELEMENTS (ELECTRODES OR WIRING STRUCTURES)

CC01

CC02

CC04

CC05

CC07

. characterized by gate electrodes or scan wiring

. . characterized by the shape of gate electrodes

. . Gate electrodes as a part of the scan wiring

. . . at the intersection between a scan wiring and a signal wiring

. . Gate electrodes and scan wiring having different structures

CC12

CC14

CC15

CC16

CC17

. . characterized by the sectional shape of scan wiring

. . characterized by the planer shape of scan wiring

. . . Meandering or bent shapes (excluding delta arrays)

. . . Redundant or parallel shapes (ladder, ring)

. . . changing widths or branches (other than G, capacitance)

CC22

CC24

CC26

. . Scan wiring connected to multiple arrays of pixel electrodes

. . arranging multiple lines of scan wiring adjacently

. . arranging scan wiring at the section other than those around pixel electrodes

CC32

CC33

. . . Multilayer electrode or multilayer wiring structures

. . . Wiring connected through contact holes

CC41

CC42

CC44

. characterized by source or drain electrodes or signal wiring

. . characterized by the shapes of source or drain electrodes

. . Connection electrodes between signal wiring and active elements

CC52

CC54

CC55

CC56

CC57

CC58

. . characterized by the sectional shape of signal wiring

. . characterized by the planar shape of signal wiring

. . . Meandering or bent shapes (excluding delta arrays)

. . . Redundant or parallel shapes (ladder, ring)

. . . changing widths or branches (other than S, D)

. . . parallel to scan wiring

CC62

CC64

CC66

. . Signal wiring connected to multiple arrays of pixel electrodes

. . arranging multiple lines of signal wiring adjacently

. . arranging signal wiring at the section other than those around pixel electrodes

CC72

CC73

CC75

. . . Multilayer electrode or multilayer wiring (excluding semiconductor layers)

. . . Wiring connected through contact holes

. . Signal wiring containing transparent conductive films

DA00
CAPACITANCE OR RESISTANCE

DA01

DA02

. Arrangement of auxiliary capacitance

. . Scan wiring (Cs on gate)

DA12

DA13

DA14

DA15

. . capacitance wiring (Cs on common)

. . . Shapes of capacitance wiring (excluding capacitance section)

. . . . redundant, parallel (excluding grid-like wiring)

. . . . Wiring parallel to signal wiring, grid-like wiring

DA23

DA24

. . . Multilayer wiring structures

. . . containing transparent conductive films

DA32

. . Wiring for counter electrodes for applying horizontal electric fields

DA41

DA42

DA43

DA44

. characterized by element structures of auxiliary capacitance

. . capacitance electrodes connected to pixel electrodes

. . . Connection electrodes between active elements and pixel electrodes

. . . Semiconductor layers

DA52

. . capacitance electrodes connected to capacitance wiring or the like

DA62

DA63

DA65

DA67

. . characterized by capacitance insulating films

. . . characterized by thinning of capacitance insulating films

. . Multiple auxiliary capacitance at a single pixel electrode

. . Three-dimensional auxiliary capacitance or auxiliary capacitance in the horizontal direction

DA71

DA72

DA73

DA74

. characterized by parasitic capacitance

. . Structures for reducing parasitic capacitance

. . . between display electrodes and scan wiring (active elements)

. . . between display electrodes and signal wiring

DA81

DA82

. Other capacitance elements (excluding capacitance between sub-pixels)

. . Capacitance elements in peripheral regions

DA91

. Resistive elements (excluding mere wiring resistance)

EA00
LIGHT SHIELDING FILMS, COLORED LAYERS OR INSULATING FILMS

EA01

EA02

EA03

EA04

EA06

EA07

. Light shielding films

. . Light shielding films on the active substrate side

. . . characterized by conductive light shielding films

. . . . Light shielding films consisting of electrodes or wiring

. . . characterized by non-conductive light shielding films

. . . . Light shielding films consisting of colored layers

EA13

EA14

EA15

EA17

. . . characterized by light shielding films on the upper layer of active elements

. . . characterized by light shielding films on the side surface of active elements

. . . characterized by light shielding films on the lower layer of active elements

. . . characterized by light shielding films between pixel electrodes

EA22

EA23

EA25

EA26

EA28

. . Light shielding films on the counter substrate (non-active substrate) side

. . . characterized by conductive light shielding films

. . . characterized by non-conductive light shielding films

. . . . Light shielding films consisting of colored layers

. . . characterized by light shielding films for active elements

EA32

EA34

. . Light shielding films in peripheral regions

. . Multilayered light-shielding-film structures (excluding laminated color layers)

EA41

EA42

EA43

EA44

. Color layers (color filters)

. . Color layers at the active substrate side

. . Color layers at the counter substrate (non-active substrate) side

. . Light shielding films in peripheral regions

EA52

EA53

EA54

EA56

. . characterized by colors

. . . Color layers with four or more colors (excluding white pixels)

. . . Color layers containing white pixels

. . Color layers characterized by overcoat layers

EA61

EA62

EA64

EA66

EA67

EA68

. characterized by insulating layers (excluding alignment members)

. . characterized by insulating layers on display electrodes

. . characterized by insulating layers under display electrodes

. . . Flattening films

. . . Textured films (excluding scattering reflection and gap adjustment)

EA72

EA74

EA76

. . characterized by insulating layers on or under wiring

. . characterized by insulating layers on active elements

. . characterized by insulating layers under active elements

FA00
ELECTRODES OR WIRING IN PERIPHERAL REGIONS ON LIQUID CRYSTAL SUBSTRATES

FA01

FA02

. Dummy pixels in the peripheral regions

. . Dummy pixels with dummy active elements

FA11

FA12

FA13

FA14

FA15

. characterized by transfer (conduction part between substrates)

. . Transfer at the inner regions of seal

. . . Transfer in the display regions

. . Transfer at the seal regions

. . Transfer at the outer regions of seal

FA22

FA24

FA26

. . characterized by transfer electrodes or wiring

. . characterized by conduction members

. . characterized by structures around transfer

FA31

FA32

FA34

FA35

FA37

FA39

. characterized by drawn wiring

. . characterized by the shape of drawn wiring

. . Layer structures different from wiring in cells

. . . Wiring connected through contact holes

. . characterized by the resistance or capacitance of drawn wiring

. . characterized by the structures around drawn wiring

FA42

FA44

FA46

FA48

. . Drawn wiring in the display region

. . Wiring drawn to both sides of the peripheral region, e.g. scan wiring (excluding split matrices)

. . characterized by wiring drawn for capacitance or horizontal electric fields

. . characterized by drawn wiring of counter electrodes for three-terminal elements

FA52

FA54

. . characterized by wiring between an internal drive circuit and an external terminal

. . Drawn wiring between external drive circuits

FA61

FA62

FA64

FA65

. characterized by external terminal (excluding inspection terminals)

. . characterized by the shapes of external terminals

. . characterized by the layer structures of external terminals

. . . connecting to drawn wiring through contact holes

FA72

FA73

FA74

FA76

. . characterized by the arrangement of external terminals

. . . External terminals arranged only at one side of a substrate

. . . External terminals arranged at the side or on the back of substrates

. . characterized by the structures around external terminals

FA81

. Protection structures of the peripheral regions (including drive circuits)

FB00
DRIVE CIRCUITS

FB01

FB02

FB03

FB05

FB06

FB07

FB09

. characterized by internal drive circuits

. . integrally formed on liquid crystal substrate (monolithic)

. . . characterized by scan-wiring (three-terminal) drive circuits

. . . . characterized by sampling circuits

. . . . characterized by reset circuits or precharge circuits

. . . characterized by other (three-terminal) wiring drive circuits

FB13

FB15

. . . Circuits other than wiring drive circuits (power-supply circuits or the like)

. . . Drive circuits having different active elements from those in display regions

FB22

FB23

FB25

FB27

. . arranging a chip on substrates (COG)

. . . Circuits other than wiring drive circuits (power-supply circuits or the like)

. . . characterized by chip terminals

. . . combined with an integrally formed circuit and a chip

FB32

FB33

FB34

. . characterized by the arrangement of internal drive circuits

. . . arranging a drive circuit in the seal regions or inside a seal

. . . Drive circuits arranged only at one side of a substrate

FB41

FB42

FB43

FB44

FB46

FB48

. characterized by external drive circuits

. . characterized by flexible printed circuits (FPC)

. . . characterized by the shapes of flexible printed circuits

. . . . Notches or openings

. . . FPC on which circuits are mounted (COF, TAB)

. . . Multilayer wiring or back-side wiring

FB52

. . characterized by printed circuit boards (PCB)

FB62

. . characterized by the arrangement of external drive circuits

FB71

FB72

FB73

FB74

FB75

FB76

. characterized by connection means for drive circuits

. . characterized by anisotropic conductive resins (ACF or the like)

. . characterized by solder

. . characterized by connectors

. . . characterized by conductive rubber or lead pins

. . characterized by wire-bonding

FB81

FB82

. characterized by connection methods or devices for drive circuits

. . Alignment marks for connecting drive circuits

GA00
DEFECT PREVENTION

GA01

GA02

GA03

GA04

GA06

. Shield electrodes

. . Shield electrodes inside panels

. . . using electrodes or wiring as shield electrodes

. . . Shield electrodes in the peripheral region

. . Shield electrodes outside panels

GA11

GA12

GA13

GA14

GA15

. Short rings

. . Short rings directly connected

. . Short rings via resistance or capacitance elements

. . Short rings via discharge regions

. . Short rings via active elements

GA21

. Ion trapping electrodes

GA31

. Other structures as electrostatic charge or static electricity countermeasures

GA41

GA42

GA43

. Structures for preventing disconnection (excluding multilayers and parallel shapes)

. Structures for preventing short circuiting

. Structures for preventing element defects

GB00
SENSORS

GB01

GB02

GB03

GB04

GB05

GB07

. Sensors integrally combined with panels (image sensors)

. . Optical sensors

. . . characterized by optical-sensor elements

. . . . characterized by the arrangement of optical sensors

. . . . . Optical sensor elements in the peripheral region

. . . . Inspection through the cooperative operation of multiple optical sensors

GB13

GB14

GB15

GB16

. . . Control elements for optical sensors

. . . . Optical sensors connected to S. D of TFT

. . . . Optical sensors connected to the gate of TFT

. . . . Multiple control elements at a single optical sensor

GB23

GB24

GB25

. . . characterized by optical elements of optical sensors

. . . . characterized by BM or CF of optical sensors

. . . . characterized by the light sources of optical sensors

GB32

GB33

GB34

GB36

. . Electric or magnetic sensors

. . . Electromagnetic sensors working only by the electrodes of one of the substrates

. . . Electromagnetic sensors working by the electrodes of both substrates

. . . Control elements for electromagnetic sensors

GB42

GB43

. . integrally forming sensor drive circuits on substrates

. . characterized by the methods of driving sensors

GB51

GB52

GB53

. Other sensors integrally combined with panels

. . Optical sensors (detecting external light or the like)

. . Temperature sensors

GB61

. Touch (image) sensors not integrally combined with panels

GB71

GB72

GB73

. Other sensors not integrally combined with panels

. . Optical sensors (detecting external light or the like)

. . Temperature sensors

GC00
PHOTOCONDUCTOR LAYERS OR DIELECTRIC LAYERS

GC01

GC02

GC04

GC05

. Photoconductor layers (excluding optical sensors)

. . characterized by photoconductor layers

. . characterized by light shielding films or light absorption films

. . characterized by reflection films or dielectric multilayer films

GC12

GC13

GC15

GC16

. . characterized by the structures of electrodes

. . . Active matrices

. . characterized by the driving methods

. . . characterized by controlling writing light and reading light

GC21

GC22

. Dielectric layers

. . Active matrices

GD00
OTHER CONSTITUTIONS

GD01

GD02

GD03

GD04

GD06

. characterized by mechanical elements (excluding insulating layers)

. . characterized by substrates

. . . Semiconductor substrates

. . . . Permeable semiconductor substrates

. . . Resin substrates at the active element side

GD12

GD13

GD14

. . characterized by alignment members

. . . Alignment division (excluding those by electrodes)

. . . . Alignment division by convexes or recesses

GD22

GD23

GD25

GD26

. . characterized by spacers

. . . characterized by columnar spacers

. . characterized by sealing members (excluding transfers)

. . . characterized by inlets

GD32

. . characterized by means for supporting panels

GD41

GD42

GD43

GD44

GD45

GD46

GD47

. characterized by optical elements (excluding BM, CF and reflection)

. . characterized by polarizers

. . characterized by retardation plates

. . characterized by scattering and diffusion plates

. . characterized by antireflection elements

. . characterized by prisms or lenses

. . characterized by illuminating devices

GD51

GD52

GD53

GD54

. Electric elements not otherwise provided for

. . Heater electrodes

. . Electrodes for transferring liquid crystals

. . Electrodes for polymer stabilization (PS).

GD61

. characterized by the methods of driving liquid-crystal panels

GD71

GD72

GD73

GD74

GD75

. Marks

. . Alignment marks (excluding those for connecting drive circuits)

. . . Alignment marks for patterning

. . . Alignment marks for bonding substrates

. . . Alignment marks for cutting substrates

GD81

. characterized by other supplemental elements

HA00
MANUFACTURING METHODS

HA01

HA02

. characterized by treatments before deposition

. . Hydrophilic or hydrophobic treatments

HA11

HA12

HA13

HA14

HA15

. characterized by deposition methods

. . characterized by vapor deposition (physical vapor deposition and chemical vapor deposition)

. . . characterized by physical vapor deposition (sputtering methods or the like)

. . . characterized by chemical vapor deposition (plasma CVD or the like)

. . . characterized by vapor deposition masks

HA22

HA23

HA24

HA26

HA27

. . characterized by application or printing

. . . Application or printing to metal layers or semiconductor layers

. . . . Transfer of semiconductor layers

. . characterized by plating or electrodeposition

. . . Plating, electrodeposition to metal layers or semiconductor layers

HA31

HA32

HA33

HA35

HA36

. characterized by patterning

. . characterized by photolithography

. . . directly forming patterns on photosensitive films

. . . characterized by photomasks (excluding half masks)

. . . . using other members as photomasks

HA43

HA44

HA45

HA47

HA49

. . . Multiple patternings by single resist

. . . . Half-tone masks

. . . . Multiple exposure

. . . Others or reducing the number of process steps

. . . Exposure by dividing substrates into multiple regions

HA53

HA54

HA55

. . . characterized by processes other than exposure processes

. . . . characterized by pre-baking or post baking

. . . . characterized by development or rinse

HA62

HA63

HA64

HA65

HA66

HA70

. . characterized by etching

. . . characterized by dry etching

. . . characterized by wet etching

. . . Resistless etching (excluding repair)

. . . Combination of multiple etchings

. . Lift-off

HA72

HA80

. . Imprint lithography

. . Removal of residue

HA81

HA82

HA84

HA86

HA88

HA90

. characterized by treatments after deposition (excluding patterning)

. . characterized by crystallization

. . characterized by doping of impurities

. . characterized by anodization

. . Mechanical polishing (CMP)

. . characterized by other heating treatments

HA91

HA93

HA95

. characterized by manufacturing devices

. Chamfering

. Organic conductive materials (excluding organic semiconductors)

HB00
DEFECT INSPECTION OR REPAIR

HB01

HB02

HB03

HB04

HB05

. Defect inspection

. . Types of inspections

. . . Lighting inspection

. . . Inspection by electric detection

. . . having multiple inspections

HB12

HB13

HB14

. . characterized by structures for inspections

. . . integrally forming inspection circuits on liquid crystal substrates

. . . characterized by inspection terminals

HB22

HB23

HB25

. . characterized by inspection methods

. . . characterized by inspection signals

. . characterized by inspection devices

HB31

HB32

HB33

HB34

HB36

HB37

HB38

HB40

. Defect repair

. . Defects to be repaired

. . . Repairing defects of active elements

. . . Repairing defects of display electrodes

. . . Repairing defects of wiring sections

. . . . Repairing disconnection as defects

. . . . Repairing short circuits as defects (excluding those with display electrodes)

. . . Repairing defects of drive circuits

HB42

HB43

HB44

HB46

HB48

HB49

HB50

. . Methods of defect repair

. . . Repair by electric connection

. . . . connecting active elements for repair

. . . . connecting electrodes or wiring to defective display electrodes

. . . . connecting detours

. . . . . Wiring exclusively for repair in display regions

. . . . . Wiring exclusively for repair in peripheral regions

HB54

. . . . connecting new wiring to defective sections

HB63

HB64

HB65

. . . characterized by repair by electric disconnection

. . . . characterized by structures for disconnection

. . . . Cutting methods other than those using laser

HB73

HB75

. . . Repair by driving methods

. . . Optical repair

HB82

. . characterized by defect repair devices

HB91

. Reuse

JA00
OPERATION PRINCIPLES OF LIQUID CRYSTALS

JA01

JA02

JA03

JA05

JA06

JA07

. based on alignment effects

. . Vertical electric field drive

. . . Horizontal alignment

. . . Twist alignment

. . . . 90 degrees (TN)

. . . . 180 degrees to 360 degrees (STN)

JA13

JA15

JA17

JA18

. . . Vertical alignment (VA)

. . . Hybrid alignment (HAN)

. . . Bend alignment (OCB)

. . . . Transfer types

JA23

JA24

JA25

JA28

. . . using ferroelectric liquid crystal

. . . . ferroelectric (bistable)

. . . . antiferroelectric

. . . Other alignment states

JA32

JA33

JA34

JA35

. . Horizontal electric field drive

. . . Horizontal alignment

. . . Vertical alignment

. . . Twist, HAN, OCB, ferroelectric liquid crystals, or the like

JA42

. . Color display by birefringent chromatic dispersion

JA51

JA52

JA53

. not based on alignment effects

. . Controlling selective reflection or interference (FC or the like)

. . controlling scattering properties (polymer dispersion or the like)

JA61

JA62

JA63

JA64

. Characteristics assigned to operation principles

. . containing polychromatic dyes

. . bistable (excluding ferroelectric liquid crystals and FC)

. . Blue phases or nonlinear effect (Kerr effect)

JA71

. Operation principles other than electric effects

JB00
SPECIAL USE

JB01

JB02

JB03

JB04

JB05

. Display (excluding general display)

. . Projectors

. . Two-sided displays

. . Multi-view or three-dimensional display

. . Variable viewing angle display

JB11

JB12

JB13

. Use other than display

. . Light quantity adjustment

. . Light modulation (polarization, phase modulation, or the like)

2H192	LIQUID CRYSTALS 5-2 (SWITCHING ELEMENTS)
	G02F1/136 -1/1368