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This page displays all 「FI」 in main group C23C16/00. |
HB:Handbook | ||||
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CC:Concordance | |||||
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Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes (reactive sputtering or vacuum evaporation C23C 14/00) [2006.01] | HB | CC | 4K030 | |
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.on temporary substrates, e.g. on substrates subsequently removed by etching [7] | HB | CC | 4K030 | |
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.Pretreatment of the material to be coated (C23C 16/04 takes precedence) [4] | HB | CC | 4K030 | |
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.Coating on selected surface areas, e.g. using masks [4] | HB | CC | 4K030 | |
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.characterised by the deposition of metallic material [4] | HB | CC | 4K030 | |
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..from metal halides [4] | HB | CC | 4K030 | |
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...Deposition of chromium only [4] | HB | CC | 4K030 | |
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...Deposition of aluminium only [4] | HB | CC | 4K030 | |
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...Deposition of only one other metal element [4] | HB | CC | 4K030 | |
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..from metal carbonyl compounds [4] | HB | CC | 4K030 | |
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..from metallo-organic compounds [4] | HB | CC | 4K030 | |
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...Deposition of aluminium only [4] | HB | CC | 4K030 | |
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.characterised by the deposition of inorganic material, other than metallic material [4] | HB | CC | 4K030 | |
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..Deposition of silicon only [4] | HB | CC | 4K030 | |
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..Deposition of carbon only [4] | HB | CC | 4K030 | |
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...Diamond only [7] | HB | CC | 4K030 | |
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..Deposition of only one other non-metal element [4] | HB | CC | 4K030 | |
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..Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides [4] | HB | CC | 4K030 | |
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...Carbides [4] | HB | CC | 4K030 | |
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...Nitrides [4] | HB | CC | 4K030 | |
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...Carbo-nitrides [4] | HB | CC | 4K030 | |
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...Borides [4] | HB | CC | 4K030 | |
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...Oxides [4] | HB | CC | 4K030 | |
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...Silicides [4] | HB | CC | 4K030 | |
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.characterised by the method of coating (C23C 16/04 takes precedence) [4] | HB | CC | 4K030 | |
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Methods | HB | CC | 4K030 | |
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Related to devices | HB | CC | 4K030 | |
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.Treatment of waste gas | HB | CC | 4K030 | |
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.Transportation of bases | HB | CC | 4K030 | |
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.Driving of bases | HB | CC | 4K030 | |
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.Removal, prevention of attachment of reactants | HB | CC | 4K030 | |
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Others | HB | CC | 4K030 | |
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..using fluidised bed processes [7] | HB | CC | 4K030 | |
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..characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials [7] | HB | CC | 4K030 | |
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...by activating reactive gas streams before introduction into the reaction chamber, e.g. by ionization or by addition of reactive species [7] | HB | CC | 4K030 | |
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..passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD (C23C 16/513 takes precedence; for flame or plasma spraying of coating material in the molten state C23C 4/00) [7] | HB | CC | 4K030 | |
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..characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber [7] | HB | CC | 4K030 | |
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..characterised by the method used for supporting substrates in the reaction chamber [7] | HB | CC | 4K030 | |
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..characterised by the method used for heating the substrate (C23C 16/48, C23C 16/50 take precedence) [4] | HB | CC | 4K030 | |
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..by irradiation, e.g. photolysis, radiolysis, particle radiation [4] | HB | CC | 4K030 | |
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..using electric discharges [4] | HB | CC | 4K030 | |
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...using dc or ac discharges [7] | HB | CC | 4K030 | |
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...using radio frequency discharges [7] | HB | CC | 4K030 | |
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....using external electrodes, e.g. in tunnel type reactors [7] | HB | CC | 4K030 | |
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....using internal electrodes [7] | HB | CC | 4K030 | |
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...using microwave discharges [7] | HB | CC | 4K030 | |
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...using plasma jets [7] | HB | CC | 4K030 | |
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...using pulsed discharges [7] | HB | CC | 4K030 | |
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...using a combination of discharges covered by two or more of groups C23C 16/503-C23C 16/515 [7] | HB | CC | 4K030 | |
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..Controlling or regulating the coating process [4] | HB | CC | 4K030 | |
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..Apparatus specially adapted for continuous coating [4] | HB | CC | 4K030 | |
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.After-treatment [4] | HB | CC | 4K030 | |