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  • C23C14/00
    		•  Coating by vacuum evaporation, by sputtering or by ion implantation [4] HB CC 4K029
  • C23C14/00@A
    		•  Making foils, powders HB CC 4K029
  • C23C14/00@B
    		•  Cleaning of devices, prevention of contamination (including cleaning, contamination preventing methods) HB CC 4K029
  • C23C14/00@C
    		•  Vacuum treatment HB CC 4K029
  • C23C14/00@D
    		•  Magnetic materials HB CC 4K029
  • C23C14/00@Z
    		•  Other PVD HB CC 4K029
  • C23C14/02
    		•  .Pretreatment of the material to be coated (C23C 14/04 takes precedence) [4] HB CC 4K029
  • C23C14/02@A
    		•  Pre-treatment of organic substrates HB CC 4K029
  • C23C14/02@B
    		•  Pre-treatment of magnetic materials, semiconductors HB CC 4K029
  • C23C14/02@Z
    		•  Other pre-treatment HB CC 4K029
  • C23C14/04
    		•  .Coating on selected surface areas, e.g. using masks [4] HB CC 4K029
  • C23C14/04@A
    		•  Masks HB CC 4K029
  • C23C14/04@B
    		•  Resist HB CC 4K029
  • C23C14/04@C
    		•  Transfer HB CC 4K029
  • C23C14/04@Z
    		•  Other selective covering HB CC 4K029
  • C23C14/06
    		•  .characterised by the coating material (C23C 14/04 takes precedence) [4] HB CC 4K029
  • C23C14/06@A
    		•  Nitrides (excluding BN, carbontrides etc.) HB CC 4K029
  • C23C14/06@B
    		•  Carbides (excluding C) HB CC 4K029
  • C23C14/06@C
    		•  Boron compounds (excluding BN) HB CC 4K029
  • C23C14/06@D
    		•  Sulfides HB CC 4K029
  • C23C14/06@E
    		•  Silicides HB CC 4K029
  • C23C14/06@F
    		•  Carbide coating (graphite diamond) HB CC 4K029
  • C23C14/06@G
    		•  Other compound coverings (fluorine compounds, arsenic compounds.) HB CC 4K029
  • C23C14/06@H
    		•  Carbonitrides (including juxtaposition with carbides, nitrides) HB CC 4K029
  • C23C14/06@J
    		•  BN HB CC 4K029
  • C23C14/06@K
    		•  Composite compound coating (excluding carbonitrides, multi-metal compounds) HB CC 4K029
  • C23C14/06@L
    		•  Compound coating (including multi-metal compounds) HB CC 4K029
  • C23C14/06@M
    		•  Laminate coating in general (diffused layers are not counted in layers, reformed layers are counted) HB CC 4K029
  • C23C14/06@N
    		•  .Laminate coating including metal layer HB CC 4K029
  • C23C14/06@P
    		•  .Laminate coating not including metal layer HB CC 4K029
  • C23C14/06@Q
    		•  .Laminate coating including organic layer (precedence over N, P) HB CC 4K029
  • C23C14/06@R
    		•  Reflective coating HB CC 4K029
  • C23C14/06@S
    		•  Superconducting coating HB CC 4K029
  • C23C14/06@T
    		•  Magnetic coating HB CC 4K029
  • C23C14/06@Z
    		•  Other coating materials HB CC 4K029
  • C23C14/08
    		•  ..Oxides (C23C 14/10 takes precedence) [4] HB CC 4K029
  • C23C14/08@A
    		•  Aluminium oxides HB CC 4K029
  • C23C14/08@B
    		•  Iron oxides HB CC 4K029
  • C23C14/08@C
    		•  Zinc oxides HB CC 4K029
  • C23C14/08@D
    		•  Stannic oxides or indium oxides (including ITO coating) HB CC 4K029
  • C23C14/08@E
    		•  Titanic oxides HB CC 4K029
  • C23C14/08@F
    		•  Oxides of Zr, Hf HB CC 4K029
  • C23C14/08@G
    		•  Oxides of refractory metals (excluding Ti, Zr, Hf, e.g. V, Nb) HB CC 4K029
  • C23C14/08@H
    		•  Oxides of precious metals HB CC 4K029
  • C23C14/08@J
    		•  Other single metal oxides HB CC 4K029
  • C23C14/08@K
    		•  Composite oxides (polygenetic metallic oxides excluding ITO coating) HB CC 4K029
  • C23C14/08@L
    		•  Superconductor oxides HB CC 4K029
  • C23C14/08@M
    		•  Magnetic coating oxides HB CC 4K029
  • C23C14/08@N
    		•  Laminate HB CC 4K029
  • C23C14/08@Z
    		•  Others HB CC 4K029
  • C23C14/10
    		•  ..Glass or silica [4] HB CC 4K029
  • C23C14/12
    		•  ..Organic material [4] HB CC 4K029
  • C23C14/14
    		•  ..Metallic material, boron or silicon [4] HB CC 4K029
  • C23C14/14@A
    		•  Silicides HB CC 4K029
  • C23C14/14@B
    		•  Al (containing alloy of Al 50% or more) HB CC 4K029
  • C23C14/14@C
    		•  Zn (containing Zn alloy, e.g. Zn-Mg alloy) HB CC 4K029
  • C23C14/14@D
    		•  Metallic materials (with specified other metals, containing B) HB CC 4K029
  • C23C14/14@E
    		•  Amorphous metallic materials HB CC 4K029
  • C23C14/14@F
    		•  Magnetic metal film (magnetic recording media etc.) HB CC 4K029
  • C23C14/14@G
    		•  Laminate coating consisting of metal layer only HB CC 4K029
  • C23C14/14@Z
    		•  Other metallic material film HB CC 4K029
  • C23C14/16
    		•  ...on metallic substrates or on substrates of boron or silicon [4] HB CC 4K029
  • C23C14/16@A
    		•  Steel plate HB CC 4K029
  • C23C14/16@B
    		•  Super-hard alloys HB CC 4K029
  • C23C14/16@C
    		•  Decorations HB CC 4K029
  • C23C14/16@D
    		•  Magnets HB CC 4K029
  • C23C14/16@Z
    		•  Characterized by other metallic material substrates (including boron, silicon) HB CC 4K029
  • C23C14/18
    		•  ...on other inorganic substrates [4] HB CC 4K029
  • C23C14/20
    		•  ...on organic substrates [4] HB CC 4K029
  • C23C14/20@A
    		•  Coating on resin substrates HB CC 4K029
  • C23C14/20@B
    		•  Coating on paint layer HB CC 4K029
  • C23C14/20@C
    		•  Coating on double paint layer HB CC 4K029
  • C23C14/20@D
    		•  Adhesion, transfer on metal layer HB CC 4K029
  • C23C14/20@Z
    		•  Characterized by other organic material substrates (paper, fibre etc.) HB CC 4K029
  • C23C14/22
    		•  .characterised by the process of coating [4] HB CC 4K029
  • C23C14/22@A
    		•  Combined use of vacuum evaporation and ion implantation (excluding simultaneous irradiation of beam 14/48) HB CC 4K029
  • C23C14/22@B
    		•  Combined use of sputtering and ion implantation (excluding simultaneous irradiation of beam 14/48) HB CC 4K029
  • C23C14/22@C
    		•  Combined use of vacuum evaporation and sputtering (excluding simultaneous irradiation of beam 14/48) HB CC 4K029
  • C23C14/22@D
    		•  General coating methods using microwave HB CC 4K029
  • C23C14/22@E
    		•  General coating methods of magnetic coating HB CC 4K029
  • C23C14/22@F
    		•  Auxiliary energy irradiation (including light irradiation) HB CC 4K029
  • C23C14/22@Z
    		•  Characterised by other coating methods HB CC 4K029
  • C23C14/24
    		•  ..Vacuum evaporation [4] HB CC 4K029
  • C23C14/24@A
    		•  Evaporation source container unit (material quality, structure, inner coating) HB CC 4K029
  • C23C14/24@B
    		•  Heating, cooling of evaporation source container HB CC 4K029
  • C23C14/24@C
    		•  Number of evaporation source containers, movement of position HB CC 4K029
  • C23C14/24@D
    		•  Supply, replenishment of evaporation source materials HB CC 4K029
  • C23C14/24@E
    		•  Evaporation source materials per se HB CC 4K029
  • C23C14/24@F
    		•  Evaporation by electric arc discharge, arc discharge evaporation HB CC 4K029
  • C23C14/24@G
    		•  Vacuum evaporation (shutter, mask) HB CC 4K029
  • C23C14/24@H
    		•  Substrate units for formation of vacuum evaporation coat HB CC 4K029
  • C23C14/24@J
    		•  Retention and movement of substrates for formation of vacuum evaporation coat HB CC 4K029
  • C23C14/24@K
    		•  Heating and cooling of substrates for formation of vacuum evaporation coat HB CC 4K029
  • C23C14/24@L
    		•  Heating and cooling in vacuum evaporation (excluding heating, cooling of substrates) HB CC 4K029
  • C23C14/24@M
    		•  Air supply and discharge in vacuum evaporation, gas composition HB CC 4K029
  • C23C14/24@N
    		•  Vacuum evaporation (with designated film HB CC 4K029
  • C23C14/24@P
    		•  Vacuum evaporation (magnetism, magnet) HB CC 4K029
  • C23C14/24@Q
    		•  Vacuum evaporation (superconducting film) HB CC 4K029
  • C23C14/24@R
    		•  Vacuum evaporation method (with limited values) HB CC 4K029
  • C23C14/24@S
    		•  Vacuum evaporation method (with no limited values) HB CC 4K029
  • C23C14/24@T
    		•  Vacuum evaporation devices not classified above HB CC 4K029
  • C23C14/24@U
    		•  Control, detection of vacuum evaporation HB CC 4K029
  • C23C14/24@V
    		•  Continuous treatment of vacuum evaporation HB CC 4K029
  • C23C14/24@Z
    		•  Others HB CC 4K029
  • C23C14/26
    		•  ...by resistance or inductive heating of the source [4] HB CC 4K029
  • C23C14/26@A
    		•  Resistance heating HB CC 4K029
  • C23C14/26@B
    		•  Induced heating HB CC 4K029
  • C23C14/26@Z
    		•  Others HB CC 4K029
  • C23C14/28
    		•  ...by wave energy or particle radiation (C23C 14/32-C23C 14/48 take precedence) [4] HB CC 4K029
  • C23C14/30
    		•  ....by electron bombardment [4] HB CC 4K029
  • C23C14/30@A
    		•  Evaporation source (structure, transport, cooling, replenishment, detection, control) HB CC 4K029
  • C23C14/30@B
    		•  Electronic source (structure of electronic guns, deflection of electronic beams) HB CC 4K029
  • C23C14/30@Z
    		•  Others HB CC 4K029
  • C23C14/32
    		•  ...by explosion; by evaporation and subsequent ionisation of the vapours (C23C 14/34-C23C 14/48 take precedence) [4] HB CC 4K029
  • C23C14/32@A
    		•  Evaporation source HB CC 4K029
  • C23C14/32@B
    		•  Ionisation area HB CC 4K029
  • C23C14/32@C
    		•  Acceleration area HB CC 4K029
  • C23C14/32@D
    		•  Substrate area HB CC 4K029
  • C23C14/32@E
    		•  Gas supply exhaust area HB CC 4K029
  • C23C14/32@F
    		•  Ion beam evaporation HB CC 4K029
  • C23C14/32@G
    		•  .Cluster ion beam evaporation HB CC 4K029
  • C23C14/32@H
    		•  HCD HB CC 4K029
  • C23C14/32@Z
    		•  Others HB CC 4K029
  • C23C14/34
    		•  ..Sputtering [4] HB CC 4K029
  • C23C14/34@A
    		•  Material quality of target (including combined targets) HB CC 4K029
  • C23C14/34@B
    		•  Shape of target HB CC 4K029
  • C23C14/34@C
    		•  Installation of target (including peripherals, multiple targets) HB CC 4K029
  • C23C14/34@D
    		•  Facing target type sputtering HB CC 4K029
  • C23C14/34@E
    		•  Coaxial sputtering HB CC 4K029
  • C23C14/34@F
    		•  Sputter guns HB CC 4K029
  • C23C14/34@G
    		•  Shutters HB CC 4K029
  • C23C14/34@H
    		•  Substrate units for formation of sputtering coat HB CC 4K029
  • C23C14/34@J
    		•  Retention and movement of substrates for formation of sputtering coat HB CC 4K029
  • C23C14/34@K
    		•  Heating and cooling of substrates for formation of sputtering coat HB CC 4K029
  • C23C14/34@L
    		•  Heating and cooling in sputtering (excluding heating, cooling of substrates) HB CC 4K029
  • C23C14/34@M
    		•  Air supply and discharge in sputtering, gas composition HB CC 4K029
  • C23C14/34@N
    		•  Sputtering (with designated film) HB CC 4K029
  • C23C14/34@P
    		•  Sputtering (magnetism, magnet) HB CC 4K029
  • C23C14/34@Q
    		•  Sputtering (superconducting film) HB CC 4K029
  • C23C14/34@R
    		•  Sputtering method (with limited values) HB CC 4K029
  • C23C14/34@S
    		•  Sputtering method (with no limited values) HB CC 4K029
  • C23C14/34@T
    		•  Sputtering devices not classified above HB CC 4K029
  • C23C14/34@U
    		•  Control, detection of sputtering HB CC 4K029
  • C23C14/34@V
    		•  Continuous treatment of sputtering HB CC 4K029
  • C23C14/34@Z
    		•  Others HB CC 4K029
  • C23C14/35
    		•  ...by application of a magnetic field, e.g. magnetron sputtering [5] HB CC 4K029
  • C23C14/35@A
    		•  Expansion of erosion area HB CC 4K029
  • C23C14/35@B
    		•  .Movement of magnets HB CC 4K029
  • C23C14/35@C
    		•  .Control of magnetic field HB CC 4K029
  • C23C14/35@D
    		•  ..Formation of leaking magnetic field against magnetic body target HB CC 4K029
  • C23C14/35@E
    		•  Formation of parallel magnetic field HB CC 4K029
  • C23C14/35@F
    		•  Use of microwave HB CC 4K029
  • C23C14/35@Z
    		•  Others HB CC 4K029
  • C23C14/36
    		•  ...Diode sputtering (C23C 14/35 takes precedence) [4,5] HB CC 4K029
  • C23C14/38
    		•  ....by direct current glow discharge [4] HB CC 4K029
  • C23C14/40
    		•  ....with alternating current discharge, e.g. high-frequency discharge [4] HB CC 4K029
  • C23C14/42
    		•  ...Triode sputtering (C23C 14/35 takes precedence) [4,5] HB CC 4K029
  • C23C14/44
    		•  ....by application of high frequencies and additional direct voltages [4] HB CC 4K029
  • C23C14/46
    		•  ...by ion beam produced by an external ion source (C23C 14/40 takes precedence) [4] HB CC 4K029
  • C23C14/46@A
    		•  Reactivity HB CC 4K029
  • C23C14/46@B
    		•  Treatment of beam source and beam HB CC 4K029
  • C23C14/46@C
    		•  Target area HB CC 4K029
  • C23C14/46@Z
    		•  Others HB CC 4K029
  • C23C14/48
    		•  ..Ion implantation [4] HB CC 4K029
  • C23C14/48@A
    		•  Limitation of implantation conditions (implantation volume. Acceleration voltage, angle of incidence) HB CC 4K029
  • C23C14/48@B
    		•  Detection or control of implantation conditions HB CC 4K029
  • C23C14/48@C
    		•  Removal of accumulated charge HB CC 4K029
  • C23C14/48@D
    		•  Ion beam mixing (including beam assist) HB CC 4K029
  • C23C14/48@Z
    		•  Others HB CC 4K029
  • C23C14/50
    		•  ..Substrate holders [4] HB CC 4K029
  • C23C14/50@A
    		•  Fixing means (adsorption) HB CC 4K029
  • C23C14/50@B
    		•  Fixing means (elasticity) HB CC 4K029
  • C23C14/50@C
    		•  Fixing means (intermediate layer) HB CC 4K029
  • C23C14/50@D
    		•  Fixing means in general HB CC 4K029
  • C23C14/50@E
    		•  Heating, cooling of substrates HB CC 4K029
  • C23C14/50@F
    		•  Retention of substrates (mass/shutter) HB CC 4K029
  • C23C14/50@G
    		•  Revolution HB CC 4K029
  • C23C14/50@H
    		•  .Rotation and revolution HB CC 4K029
  • C23C14/50@J
    		•  Rotation only HB CC 4K029
  • C23C14/50@K
    		•  Moving of evaporated items (desorption, carry-in/carry-out, vibration, linear movement) HB CC 4K029
  • C23C14/50@Z
    		•  Others HB CC 4K029
  • C23C14/52
    		•  ..Means for observation of the coating process [4] HB CC 4K029
  • C23C14/54
    		•  ..Controlling or regulating the coating process [4] HB CC 4K029
  • C23C14/54@A
    		•  Control of coating material supply area HB CC 4K029
  • C23C14/54@B
    		•  Control of atmosphere inside vacuum tank (air supply and discharge/plasma etc.) HB CC 4K029
  • C23C14/54@C
    		•  Control of coat forming area HB CC 4K029
  • C23C14/54@D
    		•  .Temperature control of substrate and coating HB CC 4K029
  • C23C14/54@E
    		•  Optical detection of coating HB CC 4K029
  • C23C14/54@F
    		•  Feedback control HB CC 4K029
  • C23C14/54@G
    		•  Control of masks, shutters HB CC 4K029
  • C23C14/54@Z
    		•  Other controls HB CC 4K029
  • C23C14/56
    		•  ..Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks [4] HB CC 4K029
  • C23C14/56@A
    		•  Continuous treatment of elongated substrates HB CC 4K029
  • C23C14/56@B
    		•  .Related to moving HB CC 4K029
  • C23C14/56@C
    		•  .Related to seal HB CC 4K029
  • C23C14/56@D
    		•  .Heating and cooling HB CC 4K029
  • C23C14/56@E
    		•  .Related to sputtering HB CC 4K029
  • C23C14/56@F
    		•  Continuous treatment of those other than elongated substrates HB CC 4K029
  • C23C14/56@G
    		•  .Related to moving and carry-in/carry-out HB CC 4K029
  • C23C14/56@H
    		•  .Related to sputtering HB CC 4K029
  • C23C14/56@J
    		•  Masks, shutters HB CC 4K029
  • C23C14/56@K
    		•  Magnetic coating HB CC 4K029
  • C23C14/56@L
    		•  Electrode foils for condensers HB CC 4K029
  • C23C14/56@Z
    		•  Others HB CC 4K029
  • C23C14/58
    		•  .After-treatment [4] HB CC 4K029
  • C23C14/58@A
    		•  Heat treatment (C takes precedence) HB CC 4K029
  • C23C14/58@B
    		•  Accompanied by formation of new coating on PVD coating HB CC 4K029
  • C23C14/58@C
    		•  Energy beam irradiation HB CC 4K029
  • C23C14/58@D
    		•  After-treatment of magnetic coating HB CC 4K029
  • C23C14/58@Z
    		•  Other after-treatment HB CC 4K029
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